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Электронный компонент: 2SC5547

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V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
20
3
15
50
400
+150
-55
+150
V
V
V
mA
mW
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
C
ob
f
T
|S
21
|
2
h
FE
I
C
=1mA, R
BE
=
I
CB
=10
A, I
E
=0
V
CB
=15V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=5V, I
C
=20mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=5V, I
E
=-20mA
V
CB
=5V, I
C
=20mA, f=1.8GHz
20
30
4.5
0.5
10
1.5
V
A
pF
GHz
dB
A
DESCRIPTION
2SC5547 is SC-62(SOT-89) package
resin sealed silicon NPN epitaxial transistor.
It is designed for high frequency application.
FEATURE
APPLICATION
For TV tuners,high frequency amplifier.
celluar phone system.
Collector cut off curent
Collector output capacitance
Gain bandwidth product
Insertion power gain
Symbol
Parameter
Collector to Base voltage
Collector current
Collector dissipation
Janction temperture
Storage temperture
Ratings
unit
MAXIMUM RATINGS
(Ta=25
)
Test conditions
Limits
min
typ
max
unit
ELECTRICAL CHARACTERISTICS
(Ta=25
)
Collector to Emitter voltage
DC forward current gain
V
CE
=5V, I
C
=5mA, f=1.0GHz
1.5
dB
NF
Noise figure
TERMINAL CONNECTOR
: EMITTER
: COLLECTOR
: BASE
JEITA : SC-62
JEDEC :
15
90
200
1.0
3.5
9.0
V
2SC5547
E
C
B
4.6 MAX
1.6
3.0
1.5
0.53
MAX
0.48 MAX
1.5
0.4
Mark
Marking
A D
Lot
No.
W
Transistor
For
High Frequency Amplify Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
UNIT:mm
High gain bandwidth product. fT=4.5GHz
High gain,low noise
Can operate at low voltage.
SC-62(SOT-89)package easy mountaing
Emitter to Base voltage
Symbol
Parameter
Emitter cut off curent
C to B break down voltage
C to E break down voltage
ISAHAYAELECTRONICSCORPORATION
2SC5547
-
1
10
100
1000
0.1
1
10
100
IC(mA)
hFE
Ta=25
VCE=5V
0.001
0.01
0.1
1
10
100
0.5
0.6
0.7
0.8
0.9
1
VBE(V)
IC(mA)
Ta=25
VCE=5V
-
0.10
1.00
10.00
0.1
1.0
10.0
100.0
IC(mA)
fT(GHz)
Ta=25
VCE=5V
-
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
0.1
1.0
10.0
100.0
IC(mA)
S21(dB)
Ta=25
VCE=5V
f=0.5GHz
f=1.0GHz
-
0.1
1.0
10.0
0.1
1
10
100
V
CB
(V)
Ta=25
IE=0mA
f=1MHz
-
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
I
C
(mA)
Ta=25
V
CE
=5V
f=1.0GHz
Collector current
Collector output capacitance
VS Collector output capacitance
Collector to Base voltage
Collector current
Collector current
Noise Figure VS. Collector current
Gain bandwidth product
VS.Collector current
Transistor
For
High Frequency Amplify Application
Silicon NPN Epitaxial Type
Collector current
DC forward current gain
VS. Collector current
Insertion power gain
VS.
Collector current
Base to Emitter voltage
Common Emitter Transfer
Collector current
Collector output capacitance
VS. Collector to Base voltage
ISAHAYAELECTRONICSCORPORATION
parameter
VCE=5V,IC=5mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.334
0.321
0.312
0.305
0.301
0.293
0.285
0.281
0.277
0.273
0.271
0.270
0.268
0.268
0.269
0.270
-143.8
-154.7
-164.0
-172.2
-179.5
173.3
166.3
160.5
154.1
147.5
141.7
135.7
129.5
123.1
118.1
112.8
0.098
0.108
0.119
0.130
0.141
0.153
0.165
0.177
0.189
0.200
0.213
0.227
0.238
0.250
0.264
0.276
50.7
51.8
52.4
52.9
52.9
52.8
53.0
52.6
52.0
51.4
50.9
49.9
49.0
48.1
47.1
45.9
5.077
4.301
3.721
3.281
2.948
2.675
2.441
2.258
2.099
1.957
1.843
1.741
1.650
1.572
1.502
1.434
86.1
80.3
75.2
70.4
65.7
61.3
57.3
53.4
49.6
46.1
42.6
39.2
35.9
32.9
29.8
26.9
0.433
0.409
0.400
0.397
0.405
0.409
0.413
0.424
0.432
0.443
0.454
0.462
0.473
0.484
0.495
0.507
-56.6
-59.8
-62.7
-65.6
-68.4
-71.1
-73.7
-76.0
-78.5
-80.6
-83.2
-85.5
-87.3
-89.5
-91.8
-93.9
2SC5547
VCE=5V,IC=2mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.410
0.399
0.389
0.382
0.377
0.366
0.359
0.356
0.354
0.350
0.349
0.346
0.343
0.343
0.343
0.350
-117.8
-128.3
-138.5
-147.4
-156.1
-163.9
-170.1
-176.7
176.6
169.9
163.5
156.4
149.7
143.8
137.2
132.4
0.131
0.134
0.139
0.142
0.144
0.148
0.152
0.156
0.162
0.168
0.176
0.185
0.194
0.205
0.216
0.228
38.9
36.7
35.3
34.7
34.6
35.8
36.9
38.4
39.8
41.2
42.6
43.9
44.9
45.4
46.0
46.4
4.272
3.612
3.142
2.749
2.471
2.240
2.034
1.864
1.730
1.610
1.515
1.425
1.347
1.282
1.226
1.153
91.5
85.5
79.9
74.9
69.7
64.6
59.9
55.5
51.4
47.6
43.8
40.0
36.5
33.0
29.8
26.5
0.639
0.599
0.577
0.559
0.554
0.547
0.546
0.551
0.554
0.561
0.567
0.573
0.582
0.589
0.597
0.609
-50.9
-55.9
-60.0
-63.7
-67.2
-70.3
-73.2
-75.9
-78.2
-81.1
-83.6
-86.1
-88.2
-90.4
-92.7
-95.2
VCE=5V,IC=10mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.300
0.292
0.285
0.280
0.277
0.272
0.266
0.263
0.259
0.256
0.254
0.253
0.252
0.251
0.251
0.253
-164.4
-174.1
177.1
170.4
163.6
156.7
150.8
145.5
139.6
133.4
128.1
122.1
116.8
111.4
105.7
100.7
0.089
0.104
0.118
0.132
0.147
0.161
0.176
0.190
0.203
0.216
0.231
0.244
0.258
0.270
0.283
0.295
62.0
62.3
61.7
61.5
60.5
59.6
58.6
57.6
56.0
54.8
53.6
52.1
50.5
48.9
47.4
46.1
5.555
4.675
4.056
3.574
3.208
2.902
2.657
2.454
2.281
2.129
2.006
1.898
1.792
1.706
1.631
1.561
81.9
76.8
72.0
67.6
63.4
59.4
55.7
52.2
48.6
45.3
42.0
38.7
35.6
32.7
29.8
27.0
0.326
0.318
0.324
0.327
0.337
0.346
0.355
0.367
0.377
0.390
0.404
0.416
0.423
0.439
0.450
0.465
-55.8
-58.3
-61.3
-64.4
-67.3
-70.1
-72.7
-75.2
-77.7
-79.8
-82.5
-84.9
-86.7
-88.6
-90.7
-93.3
Transistor
For
High Frequency Amplify Application
Silicon NPN Epitaxial Type
ISAHAYAELECTRONICSCORPORATION























Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan





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Jan.2003