DESCRIPTION
2SC58142SC58152SC58162SC5817 is a super mini package
silicon NPN epitaxial type transistor. It is designed for low frequency
voltage amplify application.
FEATURE
Facilitates miniaturization and high-density mounting
Excellent linearity of DC forward current gain
Low collecter to emitter saturation voltage
V
CE(sat)
=0.3V max (@I
C
=30mA,I
B
=1.5mA)
APPLICATION
For hybrid IC , small type machine low frequency voltage amplify
application
Transistor
DEVELOPING
2SC58142SC58152SC58162SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
Unit
2SC5814
2SC5815
JEITASC-59
JEITASC-70
JEDECsimilar to TO-236
JEDEC-
Electrode connections
Electrode connections
base
base
emitter
emitter
collecter
collecter
2SC5816
2SC5817
JEITA-
JEITA-
JEDEC-
JEDEC-
Electrode connections
Electrode connections
base
base
emitter
emitter
collecter
collecter
0.
1
6
0
0.
1
0.
8
1.
1
0.
4
0.5
1.5
0.5
2.5
0.
9
5
0.
9
5
1.
9
0
2.
9
0.
1
5
0
0.
1
0.
7
0.
9
0.
3
1.25
0.425
2.1
0.
6
5
0.
6
5
1.
3
2.
0
0.425
0.
1
0
0.
1
0.
5
5
0.
7
0.
3
0.4
0.8
0.4
1.6
0.
5
0.
5
1.
0
1.
6
0.
1
0.
4
5
0.
25
0.8
1.2
0.
4
0.
4
0.
8
1.
2
MARKING
TYPE NAME
ITEM
MAXIMUM RATINGS (Ta=25)
RATINGS
SYMBOL PARAMETER
2SC5814 2SC5815 2SC5816 2SC5817
UNIT
V
CBO
Collector to Base voltage
60
V
V
EBO
Emitter to Base voltage
6
V
V
CEO
Collector to Emitter voltage
60
V
I
C
Collector
current
125
mA
P
C
Collector
dissipation
150
125 100 mW
T
j
Junction
temperature
125
T
stg
Storage
temperature
-55125
ISAHAYA ELECTRONICS CORPORATION
Transistor
DEVELOPING
2SC58142SC58152SC58162SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25)
LIMITS
SYMBOL PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
V
(BR)CEO
C to E break down voltage
I
C
=100uAR
BE
= 60
V
I
CBO
Collector cut off current
V
CB
=60VI
E
=0mA
0.5
A
I
EBO
Emitter cut off current
V
EB
=4VI
C
=0mA
0.5
A
DC forward current gain
V
CE
=6VI
C
=1mA 120
560
-
DC forward current gain
V
CE
=6VI
C
=0.1mA 70
-
V
CE(sat)
C to E saturation voltage
I
C
=30mAI
B
=1.5mA
0.3
V
f
T
Gain band width product
V
CE
=6VI
E
=-10mA
200
MHz
Cob
Collector output capacitance
V
CB
=6VI
E
=0mAf=1MHz
1.5
pF
It shows
classification in right table.
Item Q R S
120270
180390
270560
Marking EQ
ER
ES
Item E F
150300
250500
Marking EE
EF
ISAHAYA ELECTRONICS CORPORATION
Transistor
DEVELOPING
2SC58142SC58152SC58162SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
2SC5814 2SC5815
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
0
50
100
150
200
250
0
25
50
75
100
1
AMBIENT TEMPERATURE Ta[]
COLLECTOR DISSIPATION Pc[mW]
25
2SC5816
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
0
50
100
150
200
250
0
25
50
75
100
1
AMBIENT TEMPERATURE Ta[]
COLLECTOR DISSIPATION Pc[mW]
25
2SC5817
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
0
50
100
150
200
0
25
50
75
100
1
AMBIENT TEMPERATURE Ta[]
COLLECTOR DISSIPATION Pc[mW]
25
ISAHAYA ELECTRONICS CORPORATION
Transistor
DEVELOPING
2SC58142SC58152SC58162SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
COMMON EMITTER TRANSFER
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE VBE[V]
COLLERCTOR CURRENT
IC[mA]
Ta=25
VCE=6V
COMMON EMITTER OUTPUT
0
5
10
15
20
25
30
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE VCE[V]
C
OLLECTOR CURRENT
IC[mA]
IB=0A
IB=20uA
IB=40uA
IB=60uA
IB=80uA
IB=100uA
IB=120uA
IB=140uA
IB=160uA
Ta=25
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
1
10
100
1000
0.1
1
10
100
COLLECTOR CURRENT IC[mA]
R
ELATIVE VALUE OF DC
FORWARD CURRENT GAIN hFE
Ta=25
VCE=6V
100(@IC=1mA)
COLLECTOR-EMITTER SATURATION VOLTAGE
VS COLLECTOR CURRENT
1
10
100
1000
0.1
1
10
100
COLLECTOR CURRENT IC[mA]
COLLECTOR-EMITTER SATURATION
VOLTAGE
VCE(sat)[mV]
Ta=25
IC/IB=20/1
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
0
50
100
150
200
250
-0.1
-1
-10
-100
EMITTER CURRENT IE[mA]
G
AIN BAND WIDTH PRODUCT fT[MHz]
Ta=25
VCE=6V
COLLERCTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
0.1
1
10
100
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE VCB[V]
COLLECTOR OUTPUT CAPACITANCE
Cob[pF]
Ta=25
IE=0A
f=1MHz
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003
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