APPLICATION
For muting, switching application
FEATURE
Small packege for mounting
High Emitter to Base voltage VEBO=50V
High Reverse hFE
Low ON RESISTANCE. R
ON
=1
DESCRIPTION
ISAHAYA 2SC5938 is a super mini package resin sealed
silicon NPN epitaxial transistor for muting and switching.
application
MAXIMUM RATINGS (Ta=25)
V
CBO
I
C
P
C
T
j
T
stg
50
200
+125
-55 +125
V
mA
mW
Symbol
Parameter
Collector to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
Unit
V
EBO
V
Emitter to Base voltage
V
CEO
12
V
Collector to Emitter voltage
50
150
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
I
CBO
f
T
C
ob
V
CB
=50V, I
E
=0mA
V
CE
=6V, I
C
=4mA
V
CB
=10V, I
E
=0mA, f=1MHz
Gain bandwidth product
Collector output capacitance
I
EBO
V
EB
=50V, I
C
=0mA
Emitter cut off current
h
FE
V
CE
=2V, I
C
=4mA
DC forward current gain
Collector cut off current
0.1
0.1
200
1200
30
5.0
A
A
MHz
pF
V
CE(sat)
I
C
=30mA, I
B
=3mA
C to E saturation voltage
30
mV
350 to 1200
h
FE
Marking
Item
A
B
200 to 700
5A
5B
2 S C 5 9 3 8
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
SMALL-SIGNAL TRANSISTOR
OUTLINE DRAWING
Unit: : mm
TERMINAL CONNECTOR
1
: BASE
2
: EMITTER
3
: COLLECTOR
EIJA:SC-59
1.5
0.5
0.5
2.5
1
2
3
MARKING
5 A
TYPE NAME
hFE ITEM
2 S C 5 9 3 8
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
SMALL-SIGNAL TRANSISTOR
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10
100
1000
10000
0.1
1
10
100
COLLECTOR CURRENTIC(mA)
DC FORWARD CURRENT GAIN hFE
Ta=25
VCE=2V
COMMON EMITTER TRANSFER
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE VBE(V)
COLLECTOR CURRENT IC(mA)
Ta=25
VCE=2V
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS.COLLECTOR CURRENT
0.1
1
10
100
1000
0.1
1
10
100
1000
COLLECTOR CURRENTIC(mA)
C TO E SATURATION VOLTAGE
VCE(sat)(mV)
Ta=25
IC/IB=10
ON RESISTANCE VS. BASE CURRENT
0.1
1
10
0.1
1
10
100
BASE CURRENT IB(mA)
ON RESISTANCE Ron()
Ta=25
COMMON EMITTER OUTPUT
0
10
20
30
40
50
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGEVCE(V)
COLLECTOR CURRENTIC(mA)
140A
120A
100A
80A
60A
40A
IB=20A
Ta=25
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
10
100
1000
10000
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
DC REVERSE CURRENT GAIN hFER
Ta=25
VEC=2V
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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herein.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Jan.2003
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