Электронный компонент: RT3N11M

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RT3N11M RT1N141

RT1N141

RT3N11M

Ta=25

RTr1RTr2

V

CBO

50

V

V

EBO

10

V

V

CEO

50

V

I

C

100

mA

I

CM

200

mA

P

C

150

mW

T

j

150

T

stg

-55150

0

0.1

0.65

0.9

1.25

2.1

0.65

0.65

2.0

0.2

0.13

JEITASC-88
JEDEC-

RTr2

RTr1

R1

R1

R2

R2

1

N

1

2

3

6

5

4

RT3N11M

Ta=25

RTr1RTr2

V

(BR)CBO

I

C

=100AR

BE

=

50

V

I

CBO

V

CB

=50VI

E

=0

0.1

A

h

FE

V

CE

=5VI C=10mA

50

-

V

CE(sat)

I

C

=10mAI

B

=0.5mA

0.1

0.3

V

V

I(ON)

V

CE

=0.2VI

C

=5mA

1.5

3.0

V

V

I(OFF)

V

CE

=5VI

C

=100A

0.8

1.1

V

R

1

7.0

10

13

K

R

2

/R

1

0.9

1.0

1.1

-

f

T

V

CE

=6VI

E

=-10mA

200

MHz

Tr1Tr2

-

0.1

1

10

1

10

100

-

10

100

1000

0.0

0.4

0.8

1.2

1.6

2.0

-

10

100

1000

1

10

100

http://www.idc-com.co.jp

854-0065 6-41

2002 11