5/2/03
DB90048-AAS/A4
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
APPROVALS
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UL recognised, File No. E91231
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 series of
optically coupled isolators consist of an infrared
light emitting diode and NPN silicon
photodarlington in a space efficient dual in line
plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
80mA
Reverse Voltage
5V
Power Dissipation
100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Collector-base Voltage BV
CBO
50V
Emitter-collector Voltage BV
ECO
5V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
250mW
(derate linearly 3.3mW/C above 25C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
Dimensions in
mm
2.54
6.9
6.1
8.9
max.
1.4
0.9
2.54
min.
5.3
max.
15
max.
0.25
0.48
8.3 max.
6
1
2
3
5
4
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
4N29, 4N30, 4N31, 4N32, 4N33
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 50mA
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA (note 2)
Collector-base Breakdown (BV
CBO
)
50
V
I
C
= 100
A
Emitter-collector Breakdown (BV
ECO
)
5
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 10V
Coupled
Collector Output Current ( I
C
) (Note 2
)
4N32, 4N33
50
mA
10mA I
F
, 10V V
CE
4N29, 4N30
10
mA
10mA I
F
, 10V V
CE
4N31
5
mA
10mA I
F
, 10V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
4N29,4N30,4N32,4N33
1.0
V
8mA I
F
, 2mA I
C
4N31
1.2
V
8mA I
F
, 2mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
(note 1)
7500
V
PK
(note 1)
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Turn on Time
ton
5
s
V
CC
= 10V, I
C
= 50mA,
Output Turn off Time
I
F
= 200mA ,
4N32, 4N33
toff
100
s
Pulse Width = 1ms
4N29, 4N30, 4N31
40
s
fig.1
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
5/2/03
Input
Output
10%
90%
10%
90%
t
off
t
r
t
on
t
f
Output
V
CC
= 10V
I
C
= 50mA
I
F
= 200mA,
Pulse width = 1ms
Input
FIGURE 1
DB90048-AAS/A4
5/2/03
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
20
0
40
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage
V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward current
I
F
(mA)
I
F
= 8mA
I
C
= 2mA
80
100
0
0.5
1.0
1.5
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
Ambient temperature T
A
( C )
I
F
= 10mA
V
CE
= 10V
0
10
Current Transfer Ratio vs.
Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
Collector current
I
C
(mA)
0 1 2 3 4 5
0
20
40
60
80
100
2mA
5mA
10mA
0.1 0.2 0.5 1 2 5 10 20 50 100
10000
1000
100
V
CE
= 10V
T
A
= 25C
I
F
= 1mA
20
50mA
T
A
= 25C
50
5000
800
500
DB90048-AAS/A4