ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB91040-AAS/A2
A.C. INPUT PHOTOTRANSISTOR
OPTICALLY COUPLED
ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 2 available lead forms : -
- STD
- G form
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EN60950 approval pending
DESCRIPTION
The Solid State CNY35 optically coupled
isolator consists of two infrared light emitting
diodes connected in inverse parallel and NPN
silicon photo transistor in a standard 6 pin dual
in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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AC or polarity insensitive input
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Telephone sets, Telephone exchangers
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Signal transmission between systems of
different potentials and impedances
Dimensions in mm
2.54
7.0
6.0
7.62
max.
0.5
min.
3.9
3.1
5.1
max.
15
Max
0.25
0.48
8.3 max.
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
100mA
Peak Forward Current
1A
Power Dissipation
200mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Collector-base Voltage BV
CBO
70V
Emitter-collector Voltage BV
ECO
7V
Emitter-base Voltage BV
EBO
5V
Power Dissipation
300mW
POWER DISSIPATION
Total Power Dissipation
350mW
(derate linearly 4.67mW/C above 25C)
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
CNY35X
CNY35
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91040-AAS/A2
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 10mA
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
(
note
2 )
Collector-base Breakdown (BV
CBO
)
70
V
I
C
= 100
A
Emitter-base Breakdown (BV
EBO
)
5
V
I
E
= 100
A
Emitter-collector Breakdown (BV
ECO
)
7
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
50
nA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR) (note 2 )
10
%
10mAI
F
, 10V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
0.4
V
10mAI
F
, 0.5mAI
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
7/12/00
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
DB91040-AAS/A2
7/12/00
100
Ambient temperature T
A
( C )
300
0
400
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
20
40
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
200
Forward current I
F
(mA)
80
-30 0 25 50 75 100 125
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Normalised Output Current vs.
Ambient Temperature
-2.0 -1.0 0 1.0 2.0
Forward voltage V
F
( V )
-100
10
-3
10
-2
0.0001
0.001
0.1
1
0.1 0.2 0.5 1 2 5 10 20 50
1
10
-1
1.6
1.8
2.0
2.2
2.4
-30 0 25 50 75 100
Ambient temperature T
A
( C )
5
Normalised to V
CE
= 10V ,
I
F
= 10mA , R
BE
= 1M
,
T
A
= 25C
I
F
= 20mA
I
F
= 10mA
I
F
= 5mA
Normalised output current ( I
C
)
Normalised Output Current vs.
Collector-emitter Voltage
I
F
=
-
10mA
I
F
= +10mA
100
120
0
10
Collector-emitter voltage V
CE
( V )
Normalised to V
CE
= 10V ,
I
F
= 10mA , T
A
= 25C
0.1 0.2 0.5 1 2 5 10 20 50 100
Forward current I
F
(mA)
0.01
0.0005
0.005
0.05
0.5
-80
-60
-40
-20
0
20
40
60
80
100
Normalised Output Current vs.
Forward Current
Forward current I
F
(mA)
Forward Current vs. Forward Voltage
Normalised output current ( I
C
)
Normalised output current ( I
C
)
Normalised to V
CE
= 10V ,
I
F
= +10mA , T
A
= 25C
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