7/12/00
DB92008m-AAS/a1
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 2 available lead forms : -
- STD
- G form
DESCRIPTION
The H11G_ series are optically coupled isolators
consisting of an infrared light emitting diode and
a high voltage NPN silicon photo darlington
which has an integral base-emitter resistor to
optimise switching speed and elevated
temperature characteristics in a standard 6pin
dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High Current Transfer Ratio ( 1000% min)
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High BV
CEO
(H11G1 - 100V min.)
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Low collector dark current :-
100nA max. at 80V V
CE
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Low input current 1mA I
F
APPLICATIONS
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Modems
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Copiers, facsimiles
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Numerical control machines
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Signal transmission between systems of
different potentials and impedances
H11G1X, H11G2X, H11G3X
H11G1, H11G2, H11G3
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Peak Forward Current
3A
(1
s pulse, 300pps)
Reverse Voltage
3V
Power Dissipation
100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
H11G3, H11G2, H11G1
55, 80, 100V
Collector-base Voltage BV
CBO
H11G3, H11G2, H11G1
55, 80, 100V
Emitter-baseVoltage BV
ECO
6V
Power Dissipation
200mW
POWER DISSIPATION
Total Power Dissipation
260mW
0.26
0.5
Dimensions in
mm
7.0
6.0
1.2
7.62
3.0
13
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
3
4
6
2
5
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 10mA
Reverse Voltage (V
R
)
3
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CEO
)
H11G1
100
V
I
C
= 1mA
H11G2
80
V
I
C
= 1mA
H11G3
55
V
I
C
= 1mA
Collector-base Breakdown (BV
CBO
)
H11G1
100
V
I
C
= 100
A
H11G2
80
V
I
C
= 100
A
H11G3
55
V
I
C
= 100
A
Emitter-base Breakdown (BV
EBO
)
6
V
I
E
= 0.1mA
Collector-emitter Dark Current (I
CEO
)
H11G1
100
nA
V
CE
= 80V
H11G2
100
nA
V
CE
= 60V
H11G3
100
nA
V
CE
= 30V
Coupled
Collector Output Current ( I
C
)
H11G1, H11G2
100
mA
10mA I
F
, 1.2V V
CE
H11G1, H11G2
5
mA
1mA I
F
, 5V V
CE
H11G3
2
mA
1mA I
F
, 5V V
CE
Collector-emitter Saturation Voltage V
CE(SAT)
H11G1, H11G2
1.0
V
1mA I
F
, 1mA I
C
H11G1, H11G2
1.2
V
16mA I
F
, 50mA I
C
H11G3
1.2
V
20mA I
F
, 50mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
10
11
V
IO
= 500V (note 1)
Input-output Capacitance
Cf
0.5
pF
V = 0, f =1MHz
Turn-on Time
ton
5
s
I
F
= 10mA, V
CC
= 5V,
Turn-off Time
toff
100
s
R
L
= 100
,
f = 30Hz,
pulse width equal to
or less than 300
s
7/12/00
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Input
Output
10%
90%
10%
90%
t
off
t
r
t
on
t
f
Output
V
CC
I
F
= 10mA
Input
FIGURE 1
100
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
DB92008m-AAS/a1
7/12/00
0 1 2 3 4 5 6
0.01
0.1
Collector-emitter voltage V
CE
( V )
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Normalized Output Current vs.
Collector-emitter Voltage
Collector dark current I
CEO
(nA)
Collector Dark Current vs.
Ambient Temperature
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
100
0
Collector power dissipation P
C
(mW)
Collector Power Dissipation vs. Ambient Temperature
50
0.1 1.0 10 100
Input current I
F
(mA)
Normalized Output Current vs.
Input Current
0.01
0.1
1.0
10
1.0
10
100
Normalized output current
I
F
= 1mA
10mA
50mA
1
10
100
1k
10k
100k
150
200
250
1.0
Normalized output current
Normalized Output Current vs.
Ambient Temperature
10
-50 -25 0 25 50 75 100
Ambient temperature T
A
( C )
Ambient temperature T
A
( C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current I
F
(mA)
70
80
Normalized to
I
F
= 1mA
(300
s pulse),
V
CE
= 5V
10mA
I
F
= 1mA
50mA
Normalized to
I
F
= 1mA
(300
s pulse),
V
CE
= 5V
T
A
= 25 C
0.01
Normalized output current
50V
V
CE
V
CE
= 80V
V
CE
= 10V
0.1
100
100
Normalized to
I
F
= 1mA
(300
s pulse),
V
CE
= 5V
T
A
= 25 C
DB92008m-AAS/a1
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