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Электронный компонент: IS2705-1

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
DESCRIPTION
The IS2705-1 is an optically coupled isolator
consisting of two infrared light emitting diodes
connected in inverse parallel and NPN silicon
photo transistor in a space efficient dual in line
plastic package.
FEATURES
l
Marked as FPA1.
l
Current Transfer Ratio MIN. 20%
l
Isolation Voltage (3.75kV
RMS
,5.3kV
PK
)
l
All electrical parameters 100% tested
l
Drop in replacement for NEC PS2705-1
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
IS2705-1
DB92857l-AAS/A3
22/4/02
HIGH DENSITY MOUNTING
AC INPUT, PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
Dimensions in mm
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 20mA
Reverse Voltage (V
R
)
5
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
35
V
I
C
= 0.1mA
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 10uA
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 20V
Coupled
Current Transfer Ratio (CTR)
20
400
%
1mA I
F
, 5V V
CE
Collector-emitter Saturation VoltageV
CE
(SAT)
0.2
V
20mA I
F
, 1mA I
C
Input to Output Isolation Voltage V
ISO
3750
V
RMS
See note 1
5300
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
4
18
s
V
CE
= 2V ,
Output Fall Time
tf
3
18
s
I
C
= 2mA, R
L
= 100
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 125C
Operating Temperature
-30C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.26mW/C above 25C)
Note 1
Measured with input leads shorted together and output leads shorted together.
DB92857l-AAS/A3
22/4/02
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
TAPING DIMENSIONS










Description
Symbol
Dimensions in mm ( inches )
Tape wide
W
12
0.3 ( .47 )
Pitch of sprocket holes
P
0
4
0.1 ( .15 )
Distance of compartment
F
P
2
5.5
0.1 ( .217 )
2
0.1 ( .079 )
Distance of compartment to compartment
P
1
8
0.1 ( .315 )












12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
CHARACTERISTIC CURVES


-55
0
50
25
75
100
125
125
25
0
50
75
100
-55
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Forward Current vs.
Fig.6 Collector Current vs.
Collector-emitter Voltage
Forward Voltage
Collecotr-emitter voltage V
CE
(V)
I
F
= 30mA
Ta= 25 C
5mA
10mA
1mA
20mA
Pc(MAX.)
o
0.5
0.1 0.2
1
2
5
10 20
50 100
0
20
40
60
80
100
120
140
1
0
10
2
3
4
5
6
7
8
9
0
10
20
30
40
50
0
0
Fig.3 Collector-emitter Saturation Voltage
Fig.5 Current Transfer Ratio vs.
Forward Current
vs. Forward Current
Ambient temperature Ta ( C)
Forward current I
F
(mA)
Forward current I
F
(mA)
V
CE
= 5V
Ta= 25 C
o
Current transfer ratio CTR (%)
Collector-emitter saturation voltage
V
CE
(sat) (V)
1
0
0
2
2.5
3
4
5
6
Collector current Ic (mA)
10.0
7.5
5.0
15.0
12.5
Ta= 25 C
Ic= 0.5mA
3mA
7mA
5mA
1mA
O
o
20
Forward current I
F
(mA)
1
2
0
5
10
100
200
500
50
Fig.1 Forward Current vs. Ambient
Temperature
Forward current I
F
(mA)
10
20
30
50
40
60
Collector power dissipation Pc (mW)
100
50
150
200
30
Forward voltage V
F
(V)
10
0.5
15
20
25
Ambient temperature Ta ( C)
Ta= 75 C
50 C
o
o
25 C
-25 C
0 C
o
o
o
o

12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
CHARACTERISTIC CURVES


CE
V = 2V
Ic = 2mA
Ta= 25 C
tr
tf
ts
td
0
Response time ( s)
Relative current transfer ratio (%)
Ambient temperature Ta ( C)
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Ambient temperature Ta ( C)
Fig.10 Response Time vs.
Fig.9 Collector Dark Current vs.
vs. Ambient Temperature
Ambient Temperature Ta ( C)
Fig.11 Frequency Response
Frequency f (kHz)
Voltage gain Av (dB)
V = 2V
Ic= 2mA
Ta= 25 C
-20
o
20
40
60
80
100
50
100
150
o
0
o
100
0.02
0.04
0.06
0.08
0.10
0.1
0.1
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
20
50
100
o
20
40
60
100
80
o
0.2
-10
0
1
5
2
0.5
Load Resistance
Input
Output
Input
Output
Vcc
td
tr
tf
ts
90%
10%
Output
Vcc
Test Circuit for Response Time
Test Circuit for Frequency Response
1000
100
10
20
40
60
80
I
F
= 20mA
I
C
= 1mA
I
F
= 1mA, V
CE
= 5V
Collector Dark Current I
CEO
(nA)
R
L
= 1k
1k
100
R
D
R
L
R
D
R
L
Load resistance R
L
(k )
Collector-emitter saturation voltage
V
CE
(sat) (V)
1
10
V
CE
= 20V
10000
1000
100

12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW



(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes
1.5 minutes
1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).