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Электронный компонент: IS452

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
HIGH DENSITY MOUNTING
HIGH VOLTAGE DARLINGTON
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS452 is an optically coupled isolator
consisting of an infrared light emitting diode
and a high voltage NPN silicon photo
darlington which has an integral base-emitter
resistor to optimise switching speed and
elevated temperature characteristics in a space
efficient dual in line plastic package.
FEATURES
l
Marked as FPH1.
l
Current Transfer Ratio MIN. 1000%
l
High collector-emitter voltage, Vceo=300V
l
Isolation Voltage (3.75kV
RMS
,5.3kV
PK
)
l
All electrical parameters 100% tested
l
Drop in replacement for Sharp PC452
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
IS452
DB92862l-AAS/A3
22/4/02
Dimensions in mm
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 10mA
Reverse Voltage (V
R
)
5
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
300
V
I
C
= 0.1mA
Emitter-collector Breakdown (BV
ECO
)
0.1
V
I
E
= 10uA
Collector-emitter Dark Current (I
CEO
)
200
nA
V
CE
= 200V
Coupled
Current Transfer Ratio (CTR)
1000
%
1mA I
F
, 2V V
CE
Collector-emitter Saturation VoltageV
CE
(SAT)
1.2
V
20mA I
F
, 100mA I
C
Input to Output Isolation Voltage V
ISO
3750
V
RMS
See note 1
5300
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
4
18
s
V
CE
= 2V ,
Output Fall Time
tf
3
18
s
I
C
= 2mA, R
L
= 100
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
300V
Emitter-collector Voltage BV
ECO
0.1V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.26mW/C above 25C)
Note 1
Measured with input leads shorted together and output leads shorted together.
DB92862l-AAS/A3
22/4/02
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
TAPING DIMENSIONS










Description
Symbol
Dimensions in mm ( inches )
Tape wide
W
12
0.3 ( .47 )
Pitch of sprocket holes
P
0
4
0.1 ( .15 )
Distance of compartment
F
P
2
5.5
0.1 ( .217 )
2
0.1 ( .079 )
Distance of compartment to compartment
P
1
8
0.1 ( .315 )












12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
CHARACTERISTIC CURVES


Fig.1 Forward Current vs.
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Forward Current vs. Forward
0
Collector-emitter Voltage
Fig.6 Collector Current vs.
Current
Fig.5 Current Transfer Ratio vs. Forward
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
Collector power dissipation Pc (mW)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Forward current (mA)
Collector-emitter voltage V (V)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
60
0
50
100
150
200
0
0
0.1
0
10
0
0
5
Ambient Temperature
o
o
Voltage
10mA
1.5mA
1mA
V
CE
= 2V
1000
2000
3000
5000
4
3
2
1
50
40
30
20
10
Ic= 5mA
10mA
30mA
50mA
70mA
2
4
5
3
1
4000
3mA
I
F
= 0.5mA
100
1
80
60
40
20
1.5mA
CE
7000
6000
1
2
3
4
5
2mA
2.5mA
0.5
1.5
2.5
4.5
3.5
100mA
P
C
(MAX.)
5mA
Forward current (mA)
0.5
1
100
10
1.9
1.3
Forward voltage (V)
0.9
0.7
1.1
1.5
1.7
60 C
100 C
80 C
o
o
o
o
40 C
o
20 C
Forward current I
F
(mA)
Forward current I
F
(mA)
Collector-emitter saturation voltage
V
CE
(sat) (V)
0
50
25
75
100
125
-55
-55
125
25
0
50
75
100

12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
CHARACTERISTIC CURVES


Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Temperature
Fig.10 Response Time vs. Load
CE
vs. Ambient Temperature
0
10
1
Ambient temperature Ta ( C)
Relative current transfer ratio (%)
Collector-emitter saturation voltage
V (sat) (V)
Ambient temperature Ta ( C)
100
1.0
1
0.1
1000
O
O
Resistance
Voltage gain Av (dB)
-25
0
Frequency f (kHz)
500
Fig.11 Frequency Response
80
60
40
20
0.8
0.6
0.4
0.2
-5
-10
-15
-20
100
10
1
0.1
V
CE
= 2V
I
C
= 20mA
Ta= 25 C
R
L
= 1k
100
10
2
5
10
20
50
100
200
500
Response time (
s)
Load resistance R
L
(k )
V
CE
= 2V
I
C
= 20mA
Ta= 25 C
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Output
Input
Output
Vcc
td
tr
tf
ts
90%
10%
Output
Vcc
Ambient temperature Ta ( C)
100
80
60
40
20
O
1
1000
100
Collector dark current I
CEO
(nA)
t
r
t
f
t
d
t
s
20
1.0
100
40
60
80
0.8
0.6
0.4
0.2
1.2
R
D
R
L
R
L
R
D
I
F
= 1mA
V
CE
= 2V
10
V
CE
= 200V
I
F
= 20mA
I
C
= 100mA
O
O
1.2


12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW



(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes
1.5 minutes
1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).