ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB91078-AAS/A2
SIDE LOOK MATCHED INFRARED
EMITTER DETECTOR PAIR
PHOTOTRANSISTOR OUTPUT
IS658A
IS659B
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 85C
Operating Temperature
-25C to + 85C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
5V
Power Dissipation
75mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
5V
Collector Current I
C
20mA
Power Dissipation
75mW
DESCRIPTION
The IS658A ( Gallium Arsenide Emitting
Diode ) and the IS659B ( NPN Silicon Photo
Transistor ) are a mechanically and spectrally
matched emitter detector side looking pair.
FEATURES
l
Side looking package.
l
Detector has tinted plastic package for
visible light cut out
l
LED has high output, Radiant Intensity :-
I
E
= 0.7mW min. at I
F
= 20mA
l
All electrical parameters are 100% tested
APPLICATIONS
l
Floppy disk drives
l
Infrared applied systems
l
VCRs, Video camera
l
Optoelectronic switches
ISTS658A
ISTS659B
1.6
0.8
2.15
3.0
2.8
0.3
max
R 0.8
C 0.5
4.0
0.8
max
16.5
min
0.5
min
2.54
1.7
1.15
1.5
0.75
60
0.15
0.4
R 0.5
0.8
1.4
0.45
0.8
2
2
1
1
1
2
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91078-AAS/A2
7/12/00
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
IS658A
Forward Voltage (V
F
)
1.2
1.6
V
I
F
= 20mA
Emitter
Reverse Current (I
R
)
100
A
V
R
= 5V
Radiant Flux (I
E
)
0.7
mW/sr
I
F
= 20mA
Peak Emission Wavelength
940
nm
I
F
= 20mA
Spectrum Radiation Bandwidth
50
nm
I
F
= 20mA
Beam Emission Angle
30
deg.
IS659B
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
Detector
( Note 1 )
Ee = 0mW/cm
2
Emitter-collector Breakdown (BV
ECO
)
5
V
I
E
= 100
A
Ee = 0mW/cm
2
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 10V
Ee = 0mW/cm
2
On-State Collector Current I
C
( ON )
0.2
mA
5V V
CE ,
= 940nm
Ee = 1mW/cm
2
Collector-emitter Saturation Voltage V
CE(SAT)
0.4
V
I
C
= 0.1mA
Ee = 0.5mW/cm
2
Rise Time
tr
3
s
V
CC
= 2V, I
C
= 2mA,
Fall Time
tf
3.5
s
R
L
= 100
Peak Sensitivity Wavelength
940
nm
I
F
= 20mA
Beam Acceptance Angle
15
deg.
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Special Selections are available on request. Please consult the factory.
DB91078-AAS/A2
7/12/00
0
1.0
3.0
Forward current I
F
(mA)
0 20 40 60 80 100
0 1 2 3 4 5
Irradiance Ee ( mW/cm
2
)
Relative collector current
Relative Collector Current vs.
Irradiance
0
1.0
2.0
3.0
4.0
5.0
V
CE
= 5V
Relative Radiant Intensity vs.
Forward Current
Relative radiant intensity
Ambient temperature T
A
( C )
Forward Current vs. Ambient
Temperature
Forward current I
F
(mA)
-25 0 25 50 75 100 125
-25 0 25 50 75 100 125
Ambient temperature T
A
( C )
50
0
75
Collector power dissipation P
C
(mW)
Collector Power Dissipation vs.
Ambient Temperature
25
100
0
0.5
Wavelength (nm)
840 940 1040
0.1 0.2 0.5 1 2 5 10
Load resistance R
L
(k
)
Rise and fall time tr, tf (
s)
Rise and Fall Time vs.
Load Resistance
1
2
5
10
20
50
V
CE
= 2V
I
C
= 2mA
T
A
= 25C
Spectral Distribution
Relative radiant intensity
4.0
tf
tr
100
1.0
2.0
5.0
10
30
0
40
20
50
60
tr
tf
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