ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
10/10/00
DB92043-AAS/A1
SIDE LOOKING DETECTOR
PHOTODARLINGTON OUTPUT
IS659D
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 85C
Operating Temperature
-25C to + 85C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Collector Current I
C
50mA
Power Dissipation
75mW
DESCRIPTION
The IS659D is a NPN Silicon Photo Darlington
mounted in a lateral side looking package. It is
can be used in conjunction with IS658A -
( Gallium Arsenide Emitting Diode ).
FEATURES
l
Side looking package.
l
IS659D has dark plastic package for
visible light cut out
l
High sensitivity :-
0.9mA min. I
C
at Ee = 0.1mW/cm
2
l
All electrical parameters are 100% tested
APPLICATIONS
l
Floppy disk drives
l
Infrared applied systems
l
VCRs, Video camera
l
Optoelectronic switches
1.6
2.2
3.0
3.0
2.8
0.3
max
R 0.8
C 0.5
4.0
0.8
max
16.5
min
0.5
min
2.54
1.7
1.15
1.5
0.75
60
0.15
0.4
R 0.5
0.8
1.4
0.45
0.8
2
2
1
1
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92043-AAS/A1
10/10/00
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Collector-emitter Breakdown ( BV
CEO
)
35
V
I
C
= 1mA,
( Note 1 )
Ee = 0mW/cm
2
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A,
Ee = 0mW/cm
2
Collector-emitter Dark Current ( I
CEO
)
100
nA
V
CE
= 10V,
Ee = 0mW/cm
2
On-State Collector Current I
C
( ON )
0.9
27
mA
V
CE
= 2V,
Ee = 0.1mW/cm
2
Collector-emitter Saturation Voltage V
CE(SAT)
1.0
V
I
C
= 1.5mA,
Ee = 1mW/cm
2
Rise Time
tr
80
s
V
CE
= 2V, I
C
= 10mA,
Fall Time
tf
70
s
R
L
= 100
Peak Sensitivity Wavelength
860
nm
I
F
= 20mA
Beam Acceptance Angle
13
deg.
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Special Selections are available on request. Please consult the factory.
DB92043-AAS/A1
10/10/00
1
5
20
Distance to emitter d (mm)
1 2 5 10 20 50 100
0.01 0.02 0.05 0.1 0.2 0.5 1.0
Irradiance Ee ( mW/cm
2
)
Collector current I
C
(mA)
Collector Current vs. Irradiance
1
2
5
10
20
50
Relative Output vs. Distance
( Emitter : IS658A )
Relative collector current (%)
Ambient temperature T
A
( C )
Relative Collector Current vs.
Ambient Temperature
Relative collector current ( % )
-25 0 25 50 75 100
-25 0 25 50 75 100 125
Ambient temperature T
A
( C )
50
0
75
Collector power dissipation P
C
(mW)
Collector Power Dissipation vs.
Ambient Temperature
25
100
0
50
Wavelength (nm)
700 900 1100
10 20 50 100 200 500 1000
Load resistance R
L
(
)
Rise and fall time tr, tf (
s)
Rise and Fall Time vs.
Load Resistance
10
20
50
100
200
500
V
CE
= 2V
I
C
= 10mA
T
A
= 25C
Spectral Sensitivity
Relative sensitivity (%)
50
tf
tr
1000
100
10
100
25
75
0
100
50
125
150
175
V
CE
= 2V
T
A
= 25C
100
2
V
CE
= 2V
Ee = 0.1mW/cm
2
T
A
= 25C
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