ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
27/5/03
DB92463m-AAS/A4
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
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BSI approved - Certificate No. 8001
DESCRIPTION
The IS7000 is an optically coupled isolator
consisting of infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a space efficient, end-stackable
4 pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
)
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High Current Transfer Ratio ( 1000% min)
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High BV
CEO
( 300V min. )
APPLICATIONS
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Modems
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Copiers, facsimiles
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Numerical control machines
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Signal transmission between systems of
different potentials and impedances
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 125C
Operating Temperature
-30C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
300V
Emitter-collector Voltage BV
ECO
0.1V
Collector Current I
C
150mA
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
10.16
0.26
OPTION G
7.62
OPTION SM
SURFACE MOUNT
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
0.26
13
Max
2.54
Dimensions in mm
5.08
4.08
4
3
1
2
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
IS7000
IS7000X
DB92463m-AAS/A4
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 10mA
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
300
V
I
C
= 0.1mA ( note 2 )
Emitter-collector Breakdown (BV
ECO
)
0.1
V
I
E
=
10
A
Collector-emitter Dark Current (I
CEO
)
200
nA
V
CE
= 200V
Coupled
Current Transfer Ratio (CTR)
1000
4000
%
1mA I
F
, 2V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
1.2
V
20mA I
F
, 100mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time, tr
100
s
V
CE
= 2V, I
C
= 20mA,
Output Fall Time, tf
20
s
R
L
= 100
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
27/5/03
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
DB92463m-AAS/A4
27/5/03
0
0.5
1.0
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
0 0.4 0.8 1.2 1.6 2.0
40
60
Collector-emitter voltage V
CE
( V )
20
0
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector Current vs. Collector-emitter
Voltage
1.5
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector dark current
I
CEO
(A)
Collector Dark Current vs.
Ambient Temperature
V
CE
= 200V
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current
I
F
(mA)
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage
V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
I
F
= 20mA
I
C
= 100mA
80
100
120
140
Collector current
I
C
(mA)
I
F
= 0.5mA
1mA
2mA
4mA
10mA
I
F
= 1mA
V
CE
= 2V
10
-11
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
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