19/4/99
DB91060-AAS/A1
A.C. INPUT PHOTOTRANSISTOR
OPTICALLY COUPLED
ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 approval pending
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EN60950 approval pending
DESCRIPTION
The IS733 optically coupled isolator consists of
two infrared light emitting diodes connected in
inverse parallel and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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AC or polarity insensitive input
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Telephone sets, Telephone exchangers
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Signal transmission between systems of
different potentials and impedances
Dimensions in mm
2.54
7.0
6.0
7.62
max.
0.5
min.
3.9
3.1
5.1
max.
15
Max
0.25
0.48
8.3 max.
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Peak Forward Current
1A
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Collector-base Voltage BV
CBO
35V
Emitter-collector Voltage BV
ECO
6V
Emitter-base Voltage BV
EBO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.27mW/C above 25C)
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
IS733
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
DB91060-AAS/A1
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 20mA
Output
Collector-emitter Breakdown (BV
CEO
)
35
V
I
C
= 1mA
(
note
2 )
Collector-base Breakdown (BV
CBO
)
35
V
I
C
= 100
A
Emitter-base Breakdown (BV
EBO
)
6
V
I
E
= 100
A
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 20V
Coupled
Current Transfer Ratio (CTR) (note 2 )
15
300
%
1mAI
F
, 5V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
0.2
V
20mAI
F
, 1mAI
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
4
18
s
V
CE
= 2V ,
Output Fall Time
tf
3
18
s
I
C
= 2mA, R
L
= 100
19/4/99
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
DB91060-AAS/A1
19/4/99
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
T
A
= 25C
0
1
2
3
4
5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
I
F
= 20mA
I
C
= 1mA
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
Collector current I
C
(mA)
Current Transfer Ratio vs. Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
1 2 5 10 20 50
0
80
120
160
200
240
0 2 4 6 8 10
0
10
20
30
40
50
40
T
A
= 25C
280
320
Forward current I
F
(mA)
Collector-emitter saturation voltage V
CE(S
A
T)
(V)
0 5 10 15
6
V
CE
= 5V
T
A
= 25C
I
F
= 5mA
2mA
Ic
=1mA
8mA
5mA
3mA
10
15
20
30
50
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