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Электронный компонент: ISD201

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IS201, IS202, IS203, IS204,
ISD201, ISD202, ISD203, ISD204,
ISQ201, ISQ202, ISQ203, ISQ204
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
12/3/03
DB91021m-AAS/A4
0.5
7.62
7.0
6.0
1.2
OPTION G
7.62
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
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IS20* Certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
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BSI approved - Certificate No. 8001
DESCRIPTION
The IS20*, ISD20*, ISQ20* series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
(70V min)
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All electrical parameter 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
10.16
9.16
7.0
6.0
7.62
1.2
13
Max
0.5
2.54
0.5
0.26
0.5
3
4
1
5
8
2
1
3
4
6
Dimensions in mm
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
0.5
0.26
2.54
0.5
0.26
13
Max
3.0
13
Max
3.35
4.0
3.0
3.0
20.32
19.32
4.0
3.0
4.0
3.0
3.35
3.35
2.54
0.26
3
6
4
5
2
7
14
15
1
8
7.62
6.62
2
5
16
13
12
11
6
10
7
9
IS201
IS202
IS203
IS204
ISD201
ISD202
ISD203
ISD204
ISQ201
ISQ202
ISQ203
ISQ204
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
DB91021m-AAS/A4
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.65 V
I
F
= 50mA
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
70
V
I
C
= 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
50
nA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR) (Note 2)
IS201, ISD201, ISQ201
75
%
10mA I
F
, 10V V
CE
IS201, ISD201, ISQ201
10
%
1mA I
F
, 10V V
CE
IS202, ISD202, ISQ202
125
250
%
10mA I
F
, 10V V
CE
IS202, ISD202, ISQ202
30
%
1mA I
F
, 10V V
CE
IS203, ISD203, ISQ203
225
450
%
10mA I
F
, 10V V
CE
IS203, ISD203, ISQ203
50
%
1mA I
F
, 10V V
CE
IS204, ISD204, ISQ204
200
400
%
10mA I
F
, 10V V
CE
IS204, ISD204, ISQ204
100
%
1mA I
F
, 10V V
CE
Collector-emitter Saturation Voltage V
CE(SAT)
0.2
0.4
V
10mA I
F
, 2mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Turn on Time
t
ON
3.0
s
I
F
= 10mA
Output Turn off Time
t
OFF
2.5
s
V
CE
= 5V, R
L
= 75
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
12/3/03
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 125C
Operating Temperature
-25C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
70V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.67mW/C above 25C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
DB91021m-AAS/A4
12/3/03
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage
V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
I
F
= 10mA
I
C
= 2mA
Forward current
I
F
(mA)
Ambient temperature T
A
( C )
0
0.5
1.0
1.5
I
F
= 1mA
V
CE
= 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
Ambient temperature T
A
( C )
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
V
CE
= 10V
T
A
= 25C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
(mA)