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Электронный компонент: ISP815-1

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
31/3/03
DB92442m-AAS/A6
0.26
20.32
19.32
3.35
4.0
3.0
0.5
7.62
13
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
2
4
3
0.26
13
Max
2.54
3.0
10.16
9.16
3.35
7.0
6.0
7.62
1.2
13
Max
0.5
0.26
2.54
1
2
3
7
8
15
10
9
LOW INPUT CURRENT
PHOTODARLINGTON OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P01102465
Fimko - Certificate No. FI18162
Semko - Reference No. 0202041/01-25
Demko - Certificate No. 311161-01
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BSI approved - Certificate No. 8001
DESCRIPTION
The ISP815-3,-2,-1, ISP825-3,-2,-1, ISP845-3,-2,-1
series of optically coupled isolators consist of
infrared light emitting diodes and NPN silicon
photodarlingtons in space efficient dual in line
plastic packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Low input current 0.25mA I
F
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High CurrentTransfer Ratio (200% min)
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High Isolation Voltage (5.3kV
RMS
)
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High BV
CEO
(70V min)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
Dimensions in mm
5.08
4.08
1
2
3
4
8
4.0
3.0
0.5
16
4
13
6
11
5
12
14
6
5
7
ISP815X3,2,1
ISP815-3,2,1
ISP825X3,2,1
ISP825-3,2,1
ISP845X3,2,1
ISP845-3,2,1
ISP815X,ISP825X,ISP845X3,2,1
ISP815,ISP825,ISP845-3,-2,-1
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1
1.25
0.75
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92442m-AAS/A6
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 20mA
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
70
V
I
C
= 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 20V
Coupled
Current Transfer Ratio (CTR) (Note 2
)
ISP815-3, ISP825-3, ISP845-3
200
%
0.25mA I
F
, 1.0V V
CE
400
%
0.5mA I
F
, 1.0V V
CE
800
%
1.0mA I
F
, 1.0V V
CE
.
ISP815-2, ISP825-2, ISP845-2
400
%
0.5mA I
F
, 1.0V V
CE
800
%
1.0mA I
F
, 1.0V V
CE
ISP815-1, ISP825-1, ISP845-1
800
%
1.0mA I
F
, 1.0V V
CE
Collector-emitter Saturation Voltage -3
1.0
V
0.25mA I
F
, 0.5mA I
C
-2
1.0
V
0.5mA I
F
, 2mA I
C
-1
1.0
V
1.0mA I
F
, 8mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
60
300
s
V
CE
= 2V ,
Output Fall Time
tf
53
250
s
I
C
= 10mA,R
L
= 100
31/3/03
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 125C
Operating Temperature
-30C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
70V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/C above 25C)
DB92442m-AAS/A6
31/3/03
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage
V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
6
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward current
I
F
(mA)
Collector Current vs.
Collector-emitter Voltage
0
0.5
1.0
1.5
0 1 2 3 4 5
4
2
8
Collector-emitter voltage V
CE
( V )
Collector current
I
C
(mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
I
F
= 1mA
V
CE
= 1V
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Current Transfer Ratio vs. Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
0
400
600
800
1000
0.1 0.2 0.5 1 2 5
1200
200
V
CE
= 1V
T
A
= 25 C
T
A
= 25C
I
F
= 1.0mA
I
F
= 0.25mA
I
F
= 1mA
I
C
= 8mA
I
F
= 0.5mA