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Электронный компонент: ISP844-2

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
0.26
20.32
19.32
3.35
4.0
3.0
0.5
13
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
3.35
7.0
6.0
0.5
0.5
7.62
0.26
13
Max
2.54
10.16
SURFACE MOUNT
0.26
7.62
ISP814X3,2,1
ISP814-3,2,1
ISP824X3,2,1
ISP824-3,2,1
3.0
10.16
9.16
4.0
3.0
3.35
0.5
7.0
6.0
7.62
1.2
13
Max
0.5
0.26
2.54
ISP844X3,2,1
ISP844-3,2,1
Dimensions in mm
LOW INPUT CURRENT A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
1
2
3
7
8
16
15
10
4
13
11
12
14
9
6
5
4
8
7
6
2
1
3
5
4
3
1
2
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP814-3,-2,-1, ISP824-3,-2,-1, ISP844-3,-2,-1
series of optically coupled isolators consist of two
infrared light emitting diodes connected in inverse
parallel and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
Low input current 0.25mA I
F
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION G
OPTION SM
5.08
4.08
4.0
3.0
7.62
ISP814X,ISP824X,ISP844X3,2,1
ISP814,ISP824,ISP844-3,-2,-1
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
DB92449m-AAS/A4
DB92449m-AAS/A4
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 20mA
Output
Collector-emitter Breakdown (BV
CEO
)
70
V
I
C
= 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 20V
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP814-3, ISP824-3, ISP844-3
20
%
0.25mAI
F
,0.4V V
CE
40
%
0.5mA I
F
, 0.4V V
CE
80
%
1.0mA I
F
, 0.4V V
CE.
ISP814-2, ISP824-2, ISP844-2
40
%
0.5mA I
F
, 0.4V V
CE
80
%
1.0mA I
F
, 0.4V V
CE
ISP814-1, ISP824-1, ISP844-1
80
%
1.0mA I
F
, 0.4V V
CE
Collector-Emitter Saturation Voltage-3
0.4
V
0.25mAI
F
,0.05mAI
C
-2
0.4
V
0.5mA I
F
, 0.2mA I
C
-1
0.4
V
1.0mA I
F
, 0.8mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
4
18
s
V
CE
= 2V ,
Output Fall Time
tf
3
18
s
I
C
=0.05mA,R
L
=100
7/12/00
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 125C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
70V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/C above 25C)
DB92449m-AAS/A4
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.6
1.0
0
0.06
0.12
0.18
0.24
0.30
0.36
0.42
I
F
= 1mA
I
C
= 0.8mA
Forward current I
F
(mA)
Collector Current vs. Low
Collector-emitter Voltage
0
0.5
1.0
1.5
0 0.2 0.4 0.6 0.8 1.0
0.4
0.2
0.8
Collector-emitter voltage V
CE
( V )
Collector current I
C
(mA)
I
F
= 1.0mA
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
I
F
= 1mA
V
CE
= 0.4V
-30 0 25 50 75 100
Ambient temperature T
A
( C )
I
F
= 0.5mA
I
F
= 0.25mA
Current Transfer Ratio vs. Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
0
40
60
80
100
0.1 0.2 0.5 1 2 5
120
20
V
CE
= 0.4V
T
A
= 25 C
T
A
= 25C