ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
24/9/97
DB92074-AAS/A1
REFLECTIVE OPTICAL
SWITCHES
ISTS149, ISTS703A, ISTS708
Dimensions in mm
DESCRIPTION
The ISTS149, ISTS703A, ISTS708 each consist
of an infrared emitting diode and a NPN silicon
photo transistor mounted side by side on
converging axes in a polycarbonate housing. The
package is designed to optimise the mechanical
resolution, coupling efficiency, ambient light
rejection, cost and reliability.The phototransistor
responds to radiation from the emitter only when
a reflective object passes within its field of view
FEATURES
l
Phototransistor output
l
Opaque housing provides improved
visible light rejection
l
Three available package types
l
Adjustable side-mounting provision
l
Also available with flying leads, with or
without connector, supplied as required
APPLICATIONS
l
Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches, VCR's,
1
2
4
3
17.8
9.7
5.1
3.18 nom.
3.18 nom.
4.45 nom.
point of
optimum
response
point of
optimum
response
3.3
3.0
4.1
3.5
5.1
2.54
15.5
15.0
9.5
12.3
5.1
17.8
2.54
4.6
8.9
2.54
2.3
3.8
9.15
5.1
17.0
1.70
1.45
8.0
5.5
2.54
0.5
sq.
15.0
22.8
1
2
3
4
1
2
3
4
4
3
2
1
point of
optimum
response
ISTS708
ISTS149
ISTS703A
3.3
3.0
0.5
sq.
0.5
sq.
DB92074-AAS/A1
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.6
V
I
F
= 40mA
Reverse Voltage (V
R
)
3
V
I
R
= 100
A
Reverse Current (I
R
)
100
A
V
R
= 3V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
( Note 1 )
Emitter-collector Breakdown (BV
ECO
)
5
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 15V
Coupled
On-State Collector Current I
C
(
ON
)
( Note 1 )
ISTS149
25
A
40mA I
F
, 5V V
CE
D(mm) = 3.8mm
ISTS703A
200
A
40mA I
F
, 5V V
CE
D(mm) = 3.8mm
ISTS708
10
A
40mA I
F
, 5V V
CE
D(mm) = 3.8mm
Collector-emitter Saturation VoltageV
CE(SAT)
ISTS149
0.4
V
40mA I
F
, 3
A I
C
D(mm) = 3.8mm
ISTS703A
0.4
V
40mA I
F
, 100
A I
C
D(mm) = 3.8mm
ISTS708
0.4
V
40mA I
F
, 3
A I
C
D(mm) = 3.8mm
Note 1
Special Selections are available on request. Please consult the factory.
24/9/97
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 85C
Operating Temperature
-25C to + 85C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
3V
Power Dissipation
90mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
5V
Collector Current I
C
20mA
Power Dissipation
50mW
DB92074-AAS/A1
24/9/97
10
-25 0 25 50 75 100 125
Ambient temperature T
A
( C )
30
0
40
Collector power dissipation P
C
(mW)
Collector Power Dissipation vs. Ambient Temperature
20
0
0.5
1.0
1.5
I
F
= 40mA
V
CE
= 5V
Ambient temperature T
A
( C )
-25 0 25 50 75 100
-25 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(SA
T
)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
I
F
= 40mA
I
C
= 100
A
0.1 1 10 100
1
10
Normalized output current
Normalized Output Current vs.
Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
0.1
0.01
0.02
0.04
0.2
0.4
2
4
Normalized Output Current
vs. Ambient Temperature
Normalized output current
T
A
= 25C
I
F
= 60mA
40mA
20mA
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Normalized output current
Normalized Output Current vs.
Forward Current
Forward current I
F
(mA)
1.6
1.8
2.0
Normalized to
I
F
= 40mA
V
CE
= 0.4V
Pulsed
PW = 100
s
PRR = 100pps
T
A
= 25C
Ambient temperature T
A
( C )
Forward Current vs. Ambient Temperature
Forward current I
F
(mA)
10mA
60
30
20
10
0
40
50
-25 0 25 50 75 100 125
50
60
70
80
Normalized to
I
F
= 40mA
V
CE
= 5V
Pulsed
PW = 100
s
PRR = 100pps
PDF 
ZIP