ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
24/9/97
DB92184-AAS/A2
1mm APERTURE OPTO-ELECTRONIC SINGLE
CHANNEL SLOTTED INTERRUPTER
SWITCHES WITH DARLINGTON SENSORS
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 85C
Operating Temperature
-25C to + 85C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
5V
Power Dissipation
75mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
6V
Collector Current I
C
50mA
Power Dissipation
75mW
ISTS300
ISTS400
3.3
DIA 2
PLCS
OPTICAL
CENTRE
LINE
12.7
E
3.0
1
2
4
3
9.0
8.0
11.1
10.5
0.45
0.40
7.62
6.6
3.3
3.0
2.8
2.54
Dimensions in mm
4
3
1
2
19.05
25.7
24.1
12.7
3.0
6.6
3.3
3.0
1
2
4
3
ISTS300
ISTS400
11.1
10.5
3.3
3.0
2.8
OPTICAL
CENTRE
LINE
2.54
0.45
0.40
9.0
8.0
7.62
E
DESCRIPTION
The ISTS300, ISTS400 opaque
photointerrupters are single channel switches
consisting of a Gallium Arsenide infrared
emitting diode and a NPN silicon photo
darlington mounted in a polycarbonate housing.
The package is designed to optimise the
mechanical resolution, coupling efficiency,
ambient light rejection, cost and reliability.
Operating on the principle that objects opaque to
infrared will interrupt the transmission of light
between an infrared emitting diode and a photo
sensor switching the output from an "ON" state to
an "OFF" state.
FEATURES
l
High Gain
l
3mm Gap between LED and Detector
l
Polycarbonate case protected against
ambient light
APPLICATIONS
l
Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches
DB92184-AAS/A2
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.7
V
I
F
= 50mA
Reverse Voltage (V
R
)
5
V
I
R
= 1
A
Reverse Current (I
R
)
100
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
( Note 1 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 25V
Coupled
On-State Collector Current I
C
(
ON
)
7.5
mA
10mA I
F
, 1.5V V
CE
( Note 1 )
Collector-emitter Saturation Voltage V
CE(SAT)
1.0
V
10mA I
F
, 1.8mA I
C
Turn-on Time
ton
45
s
V
CC
= 5V, I
F
= 10mA,
Turn-off Time
toff
250
s
R
L
= 750
24/9/97
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Special Selections are available on request. Please consult the factory.
DB92184-AAS/A2
24/9/97
25
-25 0 25 50 75 100 125
Ambient temperature T
A
( C )
75
0
100
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-25 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
50
Forward current I
F
(mA)
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 1.5V
Ambient temperature T
A
( C )
-25 0 25 50 75 100
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Normalized output current
Normalized Output Current vs.
Forward Current
Forward current I
F
(mA)
Normalized to
I
F
= 10mA
V
CE
= 1.5V
T
A
= 25C
Pulsed
PW = 100
s
PRR = 100pps
1.6
1.8
2.0
Normalized Output Current
vs. Ambient Temperature
Normalized output current
2.2
2.4
2.6
0.1 1 10 100
1
10
Normalized output current
Normalized Output Current vs.
Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
0.1
0.01
Normalized to :
I
F
= 10mA
V
CE
= 1.5V
T
A
= 25C
Pulsed
PW = 100
s
PRR = 100pps
0.02
0.04
0.2
0.4
2
4
I
F
= 10mA
5mA
1mA
2mA
-25 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(SA
T
)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
I
F
= 10mA
I
C
= 1.8mA
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