ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
24/9/97
DB91084-AAS/A1
0.5mm APERTURE OPTO-ELECTRONIC SINGLE
CHANNEL WIDE GAP SLOTTED INTERRUPTER
SWITCHES WITH TRANSISTOR SENSORS
ISTS802, ISTS802A, ISTS802B, ISTS802C
Dimensions in mm
DESCRIPTION
The ISTS802 series of opaque photointerrupters
are single channel switches consisting of a
Gallium Arsenide infrared emitting diode and a
NPN silicon photo transistor mounted in a
polycarbonate housing. The package is designed
to optimise the mechanical resolution, coupling
efficiency, ambient light rejection, cost and
reliability. Operating on the principle that objects
opaque to infrared will interrupt the transmission
of light between an infrared emitting diode and a
photo sensor switching the output from an "ON"
state to an "OFF" state.
FEATURES
l
High Sensing Accuracy Aperture - 0.5mm
l
5mm Gap between LED and Detector
l
Also available with flying leads, with or
without connector, supplied as required
APPLICATIONS
l
Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches, VCR's
20.2
3.3
DIA
4
17.2
+
3
1
2
0.5
6.6
5.0
3.3
3.0
8.3
7.9
11.3
10.9
2.8
0.45
0.40
10.16
2.54
OPTICAL
CENTRE
LINE
3.3
3.0
14.2
ISTS802A
26.2
3.3
DIA
4
20.2
+
3
1
2
0.5
6.6
5.0
3.3
3.0
8.3
7.9
11.3
10.9
2.8
0.45
0.40
10.16
2.54
OPTICAL
CENTRE
LINE
3.3
3.0
14.2
ISTS802B
3.3
DIA
4
3
1
2
17.2
20.2
14.2
5.0
6.6
3.3
3.0
ISTS802
11.3
10.9
3.3
3.0
2.8
OPTICAL
CENTRE
LINE
2.54
0.45
0.40
10.16
E
+
8.3
7.9
0.5
4
3
1
2
14.2
5.0
6.6
3.3
3.0
ISTS802C
11.3
10.9
2.8
OPTICAL
CENTRE
LINE
2.54
0.45
0.40
10.16
E
+
8.3
7.9
0.5
E
E
1
2
4
3
DB91084-AAS/A1
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.0
1.15
1.3
V
I
F
= 10mA
Reverse Voltage (V
R
)
3
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 3V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
( Note 1 )
Emitter-collector Breakdown (BV
ECO
)
5
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 24V
Coupled
Current Transfer Ratio
( CTR )
2
%
20mA I
F
, 5V V
CE
( Note 1 )
Collector-emitter Saturation VoltageV
CE(SAT)
0.4
V
20mA I
F
, 200
A I
C
Output Rise Time
tr
6
s
V
CE
= 5V ,
Output Fall Time
tf
6
s
I
C
= 2mA,R
L
= 100
Note 1
Special Selections are available on request. Please consult the factory.
24/9/97
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 85C
Operating Temperature
-25C to + 85C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
5V
Power Dissipation
75mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
5V
Collector Current I
C
20mA
Power Dissipation
75mW
DB91084-AAS/A1
24/9/97
25
-25 0 25 50 75 100 125
Ambient temperature T
A
( C )
75
0
100
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-25 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
50
Forward current I
F
(mA)
0
0.5
1.0
1.5
I
F
= 20mA
V
CE
= 5V
Ambient temperature T
A
( C )
-25 0 25 50 75 100
-25 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(SA
T
)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
I
F
= 20mA
I
C
= 200
A
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Normalized output current
Normalized Output Current vs.
Forward Current
Forward current I
F
(mA)
0.1 1 10 100
1
10
Normalized output current
Normalized Output Current vs.
Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
0.1
0.01
0.02
0.04
0.2
0.4
2
4
1.6
1.8
2.0
Normalized Output Current
vs. Ambient Temperature
Normalized output current
Normalized to
I
F
= 20mA
V
CE
= 0.4V
Pulsed
PW = 100
s
PRR = 100pps
T
A
= 25C
T
A
= 25C
Normalized to
I
F
= 20mA
V
CE
= 5V
Pulsed
PW = 100
s
PRR = 100pps
I
F
= 30mA
20mA
5mA
10mA
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