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Электронный компонент: MCT61

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92012m-AAS/A1
OPTION G
7.62
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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MCT6 -
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
MCT61, MCT62, MCT66 -
VDE 0884 approval pending
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EN60950 approval pending
DESCRIPTION
The MCT6, MCT61, MCT62 & MCT66 series
of optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages mounted two channels per unit.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
SURFACE MOUNT
OPTION SM
10.16
0.26
MCT6, MCT61, MCT62, MCT66
10.16
9.16
7.0
6.0
7.62
1.2
13
Max
0.5
2.54
0.5
0.26
3.0
4.0
3.0
3.35
3
6
4
5
2
7
1
8
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 125C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/C above 25C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
DB92012m-AAS/A1
7/12/00
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.50
V
I
F
= 20mA
Reverse Voltage (V
R
)
3
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 3V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA (note 2)
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR) (Note 2)
MCT6
20
%
10mA I
F
, 10V V
CE
MCT61
50
%
5mA I
F
, 5V V
CE
MCT62
100
%
5mA I
F
, 5V V
CE
MCT66
6
%
10mA I
F
, 10V V
CE
Collector-emitter Saturation Voltage V
CESAT
MCT6,61,62
0.4
V
16mA I
F
, 2mA I
C
MCT66
0.4
V
40mA I
F
, 2mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
Input to Output Isolation Voltage V
ISO
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time, Fall Time tr , tf
2.4
s
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
(Fig. 1)
Output Rise Time, Fall Time tr , tf
15
s
I
C
= 2mA, V
CC
= 10V,
R
L
= 1k
(Fig. 2)
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
V
CC
= 10V
V
CC
= 10V
OUTPUT
FIG 2
FIG 1
t
on
t
off
10%
90%
90%
t
r
t
f
INPUT
OUTPUT
10%
R
L
= 1k
R
L
= 100
OUTPUT
7/12/00
50
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
Forward Current vs. Ambient Temperature
Ambient temperature T
A
( C )
100
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 10V
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100 125
-30 0 25 50 75 100 125
-30 0 25 50 75 100
Collector-emitter voltage V
CE
( V )
Collector current I
C
(mA)
0 2 4 6 8 10
0
10
20
30
40
50
T
A
= 25C
10
15
20
30
50
I
F
= 5mA
Collector Current vs. Collector-emitter Voltage
Collector Power Dissipation vs. Ambient Temperature
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
V
CE
= 10V
T
A
= 25C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
(mA)
DB92012m-AAS/A1
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
I
F
= 16mA
I
C
= 2mA