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Электронный компонент: MOC3032

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
13/3/03
DB92006m-AAS/A5
10.16
0.26
OPTION G
7.62
SURFACE MOUNT
OPTION SM
OPTICALLY COUPLED BILATERAL
SWITCH LIGHT ACTIVATED ZERO
VOLTAGE CROSSING TRIAC
MOC3030, MOC3031, MOC3032, MOC3033
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The MOC303_ Series are optically coupled
isolators consisting of a Gallium Arsenide
infrared emitting diode coupled with a mono-
lithic silicon detector performing the functions
of a zero crossing bilateral triac mounted in a
standard 6 pin dual-in-line package.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
Zero Voltage Crossing
l
250V Peak Blocking Voltage
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
CRTs
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Power Triac Driver
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Motors
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Consumer appliances
l
Printers
ABSOLUTE MAXIMUM RATINGS
(25 C unless otherwise noted)
Storage Temperature
-55
0
C - +150
0
C
Operating Temperature
-40
0
C - +100
0
C
Lead Soldering Temperature
260
0
C
(1.6mm from case for 10 seconds)
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
120mW
(derate linearly 1.41mW/
0
C above 25
0
C)
OUTPUT PHOTO TRIAC
Off-State Output Terminal Voltage
250V
Forward Current (Peak)
1A
Power Dissipation
150mW
(derate linearly 1.76mW/
0
C above 25
0
C)
POWER DISSIPATION
Total Power Dissipation
250mW
(derate linearly 2.94mW/
0
C above 25
0
C)
10.46
9.86
0.6
0.1
1.25
0.75
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
0.26
0.5
7.0
6.0
1.2
7.62
3.0
13
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
3
4
6
2
5
Dimensions in mm
DB92006m-AAS/A5
13/3/03
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 20mA
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Peak Off-state Current ( I
DRM
)
500
nA
V
DRM
= 250V (note 1 )
Peak Blocking Voltage
( V
DRM
)
250
V
I
DRM
= 500nA
On-state Voltage ( V
TM
)
3.0
V
I
TM
= 100mA ( peak )
Critical rate of rise of
off-state Voltage ( dv/dt )
600
1500
V/
s
Coupled
Input Current to Trigger ( I
FT
)(note 2 )
MOC3030
30
mA
V
TM
= 3V ( note 2 )
MOC3031
15
mA
MOC3032
10
mA
MOC3033
5
mA
Holding Current , either direction ( I
H
)
400
A
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 3
7500
V
PK
See note 3
Zero
Inhibit Voltage ( V
IH
)
20
V
I
F
= Rated I
FT
Crossing
MT1-MT2 Voltage
Charact-
above which device
-eristic
will not trigger
Leakage in Inhibited State ( I
S
)
500
A
I
F
= Rated I
FT
V
DRM
= 250V off-state
Note 1. Test voltage must be applied within dv/dt rating.
Note 2. Guaranteed to trigger at an I
F
value less than or equal to max. I
FT
, recommended I
F
lies
between Rated I
FT
and absolute max. I
F
.
Note 3. Measured with input leads shorted together and output leads shorted together.
14/03/03
DB92006m-AAS/A5
CHARACTERISTIC CURVES

Fig.1 Forward Current vs.
Fig.2 On-state Current vs. Ambient
Temperature
Fig.4 Forward Current vs. Forward
0
-40
60 C
40 C
20 C
Ambient Temperature
Fig.6 Holding Current vs.
Temperature
Fig.5 On-state Voltage vs. Ambient
Fig.3 Minimum Trigger Current
vs. Ambient Temperature
I

, o
n
-sta
te

c
u
r
r
e
n
t
(A
)
Ambient temperature Ta ( C)
Ambient Temperature Ta ( C)
Ambient temperature ( C)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
0
20 40
60
80 100
60
0
0.4
1
2.0
0.01
20
40
60
80
100
20
1.0
100
20
0
10
o
o
o
Ambient Temperature
o
o
Voltage
3.0
10
100
8
6
4
2
50
40
30
20
10
100
1
o
80 C
o
100 C
0.05
0.10
TM
V
P
= 6V
R
L
= 100
2.6
2.2
1.4
1.8
40
80
60
o
V
P
= 6V
0.8
1.2
1.6
o
80
60
40
o
0.1
120
-20
-40 -20
0
80
40
20
60
100 120
F
o
rward
c
u
rrent

I
F
(m
A
)
M
i
ni
m
u
m

t
r
i
g
g
e
r c
u
rrent
I
FT
(m
A
)
O
n
-sta
te
v
o
l
t
a
g
e

V
TM
(V
)
F
o
rward
c
u
rrent

I
H
(m
A
)
F
o
rward
c
u
rrent

I
F
(m
A
)
Forward voltage V
F
(V)
I
TM
= 100mA



14/03/03
DB92006m-AAS/A5
CHARACTERISTIC CURVES

Fig.7 Turn-on Time vs. Forward
Current
Fig.8 Repetitive Peak Off-state Current
Fig.9 On-state Current vs.
On-state Voltage
vs. Temperature
R
e
p
e
ti
ti
v
e
P
e
ak
O
f
f
-
s
t
ate
Cu
r
r
e
n
t
Id
r
m
(
n
A
)
Ambient temperature Ta ( C)
3.0
1.5
0
O
0
100
0.5
2.0
2.5
1.0
80
60
40
20
Static dv/dt Test Circuit
T
u
r
n
-
on tim
e

T
on (
s)
Forward current I
F
(mA)
On-
s
t
a
te c
u
r
r
en
t I
TM
(m
A
)
R
TEST
C
TEST
D.U.T.
+ 400
Vdc
PULSE
INPUT
MERCURY
WETTED
RELAY
R= 10k
X100
SCOPE
PROBE
RC
RC
dv/dt=
0.63 V
max
=
RC
378
APPLIED VOLTAGE
WAVEFORM
0 VOLTS
V
max
= 400V
252 V
V
P
= 9V
R
L
= 100
On-state voltage V
TM
(V)
4
0
2
10
6
8
20
30
10
40
50
20
1
10
100
1000
100
40
60
80