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Электронный компонент: MOC8030

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28/3/03
NON BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The MOC8030, MOC8050 series of optically
coupled isolators consist of an infrared light emitting
diode and NPN silicon photodarlington in a standard
6pin dual in line plastic package with the base pin
unconnected.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio (500% min)
l
High BVceo ( 80V )
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
Basepin unconnected for improved noise
immunity in high EMI environment
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High sensitivity to low input drive current
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Custom electrical selections available
APPLICATIONS
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Computer terminals
l
Industrial systems controllers
l
Measuring instruments
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Signal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 125C
Operating Temperature
-25C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
80V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 3.3mW/C above 25C)
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
DB92113m-AAS/A2
1
3
2
4
6
5
0.26
0.5
7.0
6.0
1.2
7.62
3.0
13
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
Dimensions in mm
MOC8030, MOC8050
MOC8030X, MOC8050X
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 10mA
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
80
V
I
C
= 1mA (note 2)
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
1
A
V
CE
= 10V
Coupled
Output Collector Current ( I
C
)(Note 2
)
MOC8030
30
mA
10mA I
F
, 1.5V V
CE
MOC8050
50
mA
10mA I
F
, 1.5V V
CE
Input to Output Isolation Voltage V
ISO
5300
V
RMS
(note 1)
7500
V
PK
(note 1)
Input-output Isolation Resistance R
ISO
10
11
V
IO
= 500V (note 1)
Response Time (Rise), tr
60
s
V
CE
= 2V, I
C
= 10mA,
Response Time (Fall), tf
53
s
R
L
= 100
, fig.1
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
28/3/03
DB92113m-AAS/A2
FIGURE 1
28/03/03
DB92113m-AAS/A2

Fig.1 Forward Current vs.
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Forward Current vs. Forward
F
0
-25
Collector-emitter Voltage
Fig.6 Collector Current vs.
Current
Fig.3 Current Transfer Ratio vs. Forward
F
o
rw
ard

c
u
rrent
I
(m
A
)
Co
lle
c
t
o
r
p
o
we
r
d
i
s
s
ip
a
t
io
n
P
c

(
m
W
)
C
u
rren
t

t
r
an
s
f
er rat
i
o
C
T
R
(%
)
Forward current IF (mA)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
125
60
0
50
100
150
200
0
0
1
2
3
4
5
0.1
0
1
10
0
0
60
Ambient Temperature
o
Voltage
I
F
= 5mA
1mA
V
CE
= 2V
3500
50
40
30
20
10
4
8
10
6
2
2mA
100
80
60
40
20
3000
2500
2000
1500
1000
500
10
30
50
70
90
F
o
rw
ard
c
u
rrent
(
m
A
)
0.5
1
100
10
1.9
1.3
Forward voltage (V)
0.9
0.7
1.1
1.5
1.7
60 C
100 C
80 C
o
o
o
o
40 C
o
20 C
100
75
50
25
0
-25
0
50
25
75
100
125
Fig.5 Collector Current vs.
Collector-emitter Voltage
Co
llec
t
o
r
c
u
r
r
e
n
t
I
c
(
m
A
)
Collector-emitter voltage Vce (V)
Collector-emitter voltage Vce (V)
Co
llec
t
o
r
c
u
r
r
e
n
t
I
c
(
m
A
)
50
40
30
20
10
I
F
= 1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
o
P
C
(MAX.)
P
C
(MAX.)




28/03/03
DB92113m-AAS/A2

Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature
Fig.10 Response Time vs. Load
CE
O
CE
vs. Ambient Temperature
0
I = 1mA
V = 2V
CE
F
F
Ic= 5mA
I = 20mA
10
10
Ambient temperature Ta ( C)
R
e
l
a
ti
v
e
c
u
rr
ent t
r
ansfer

rati
o

(%
)
C
o
l
l
e
ctor
-e
mi
tte
r
sa
tu
r
a
ti
on
v
o
l
t
a
g
e
V
(s
a
t
) (V
)
C
o
llec
t
o
r
d
a
rk c
u
rr
e
n
t
I
(
n
A
)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
100
1.0
100
80
60
40
20
1
0.1
2
5
10
2
5
10
2
5
10
2
5
O
O
O
Resistance
0.01
V
o
l
t
ag
e g
a
i
n

A
v
(d
B
)
-20
1
Frequency f (kHz)
0.1
100
Fig.11 Frequency Response
80
60
40
20
0.8
0.6
0.4
0.2
V = 10V
CE
0.10
1.00
10.00
R
e
sp
o
n
se
ti
m
e

(
s)
Load resistance R
L
(k )
0
2
3
V
CE
= 2V
I
C
= 10mA
0
-10
V
CE
= 2V
I
C
= 2mA
10
R
L
= 10k
1k
100
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Output
Input
Output
Vcc
td
tr
tf
ts
90%
10%
Output
Vcc
t
f
t
r
t
d
t
s
20
0.00
1.00
100
40
60
80
0.80
0.60
0.40
0.20
R
L
R
D
R
D
R
L