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Электронный компонент: MOC8106

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
20/8/98
DA92586-AAS/A1
OPTION G
7.62
0.26
0.5
1
3
4
6
Dimensions in
mm
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13
Max
3.35
4.0
3.0
10.2
9.5
2.54
0.26
7.62
6.62
2
5
1.2
0.6
1.4
0.9
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
6V
Power Dissipation
120mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
70V
Emitter-collector Voltage BV
ECO
7V
Power Dissipation
160mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.94mW/C above 25C)
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
MOC8106X,MOC8107X,MOC8108X,
MOC8106, MOC8107, MOC8108
0.5
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
l
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
DESCRIPTION
The MOC8106, MOC8107, MOC8108 series of
optically coupled isolators consist of infrared
light emitting diode and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package with the base pin unconnected.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
Base pin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
l
DC motor controllers
l
Industrial systems controllers
l
Signal transmission between systems of
different potentials and impedances
S U R F A C E
M O U N T
DA92586-AAS/A1
PARAMETER
MIN
TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.0
1.15
1.5
V
I
F
= 10mA
Reverse Voltage (V
R
)
6
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CEO
)
70
V
I
C
= 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
1.0
50
nA
V
CE
= 10V
Coupled
Output Collector Current I
C
(CTR)
(2)
MOC8106
5.0(50) 15(150) mA(%)
10mA I
F
, 10V V
CE
MOC8107
10(100) 30(300) mA(%)
10mA I
F
, 10V V
CE
MOC8108
25(250) 60(600) mA(%)
10mA I
F
, 10V V
CE
Collector-emitter Saturation VoltageV
CE
(SAT)
0.15
0.4
V
5mA I
F
, 0.5mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Turn-on Time
ton
7.5
20
s
V
CC
= 10V ,
Turn-off Time
toff
5.7
20
s
I
C
= 2mA, R
L
= 100
Output Rise Time
tr
3.2
s
Output Fall Time
tf
4.7
s
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
20/8/98
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
DA92586-AAS/A1
20/8/98
50
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 10V
Forward current I
F
(mA)
0
80
120
160
200
240
40
280
320
Forward current I
F
(mA)
Current Transfer Ratio vs. Forward Current
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Current transfer ratio CTR (%)
MOC8102
V
CE
= 10V
T
A
= 25C
70
80
1 2 5 10 20 50
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
Collector current I
C
(mA)
0 2 4 6 8 10
0
10
20
30
40
50
T
A
= 25C
I
F
= 5mA
10
15
20
30
50
MOC8101
MOC8103
MOC8104
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(SA
T
)
(V)
Collector-emitter Saturation Voltage
vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
I
F
= 5mA I
C
= 0.5mA
-30 0 25 50 75 100