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Электронный компонент: TIL119

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92287-AAS/A2
NON BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
TIL119
DESCRIPTION
The TIL119 is an optically coupled isolator
consisting of an infrared light emitting diode
and NPN silicon photodarlington in a standard
6pin dual in line plastic package with the base
pin unconnected.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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Basepin unconnected for improved noise
immunity in high EMI environment
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High sensitivity to low input drive current
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
5V
Power Dissipation
120mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
5V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
250mW
(derate linearly 3.3mW/C above 25C)
APPROVALS
l
UL recognised, File No. E91231
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
1
3
2
4
6
5
Dimensions in mm
2.54
6.9
6.1
8.9
max.
1.4
0.9
2.54
min.
5.3
max.
15
max.
0.25
0.48
8.3 max.
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 10mA
Reverse Voltage (V
R
)
3
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 3V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA (note 2)
Emitter-collector Breakdown (BV
ECO
)
5
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
n
V
CE
= 10V
Coupled
Output Collector Current ( I
C
)(Note 2
)
30
mA
10mA I
F
, 1V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
1.0
V
10mA I
F
, 30mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
(note 1)
7500
V
PK
(note 1)
Input-output Isolation Resistance R
ISO
10
11
V
IO
= 500V (note 1)
Output Rise Time
tr
300
s
V
CC
=10V,I
C (on)
=2.5mA,
Output Fall Time
tf
300
s
R
L
= 100
, fig.1
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
DB92287-AAS/A2
7/12/00
Input
Output
10%
90%
10%
90%
t
off
t
r
t
on
t
f
Output
V
CC
= 10V
Input
FIGURE 1
100
DB92287-AAS/A2
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Collector power dissipation P
C
(mW)
Collector Power Dissipation vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.2
0.4
0.6
0.8
1.0
1.2
I
F
= 10mA
I
C
= 30mA
0
0.5
1.0
1.5
Normalized Current Transfer
Ratio vs. Ambient Temperature
Normalized current transfer ratio
-30 0 25 50 75 100
Ambient temperature T
A
( C )
I
F
= 10mA
V
CE
= 1V
0
10
Current Transfer Ratio vs.
Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
Collector current I
C
(mA)
0 1 2 3 4 5
0
20
40
60
80
100
2mA
0.1 0.2 0.5 1 2 5 10 20 50 100
10000
1000
100
V
CE
= 1V
T
A
= 25C
I
F
= 1mA
T
A
= 25C
40
4000
400
Ambient temperature T
A
( C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current I
F
(mA)
70
80
5mA
20