Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. A
04/30/03
IS62WV5128ALL
IS62WV5128BLL
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
512K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 55ns, 70ns
CMOS low power operation
36 mW (typical) operating
9 W (typical) CMOS standby
TTL compatible interface levels
Single power supply
1.65V 2.2V V
DD
(IS62WV5128ALL)
2.5V 3.6V V
DD
(IS62WV5128BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Industrial temperature available
DESCRIPTION
The
ISSI
IS62WV5128ALL / IS62WV5128BLL are high-
speed, 4M bit static RAMs organized as 512K words by 8
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory.
The IS62WV5128ALL and IS62WV5128BLL are packaged
in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin
sTSOP (TYPE I), and 32-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
APRIL 2003
A0-A18
CS1
OE
WE
512K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
32-pin TSOP (TYPE I), (Package Code T)
32-pin sTSOP (TYPE I) (Package Code H)
32-pin TSOP (TYPE II)
(Package Code T2)
PIN DESCRIPTIONS
A0-A18
Address Inputs
CS1
Chip Enable 1 Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
NC
No Connection
V
DD
Power
GND
Ground
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
A18
A15
V
DD
A17
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
A15
A18
WE
A13
A8
A9
A11
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
V
DD
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.65-2.2V
1.4
--
V
I
OH
= -1 mA
2.5-3.6V
2.2
--
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
1.65-2.2V
--
0.2
V
I
OL
= 2.1 mA
2.5-3.6V
--
0.4
V
V
IH
Input HIGH Voltage
1.65-2.2V
1.4
V
DD
+ 0.2
V
2.5-3.6V
2.2
V
DD
+ 0.3
V
V
IL
(1)
Input LOW Voltage
1.65-2.2V
0.2
0.4
V
2.5-3.6V
0.2
0.6
V
I
LI
Input Leakage
GND
V
IN
V
DD
1
1
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
1
1
A
Notes:
1. V
IL
(min.) = 1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.2 to V
DD
+0.3
V
V
DD
V
DD
Related to GND
0.2 to V
DD
+0.3
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
IS62WV5128ALL
IS62WV5128BLL
Commercial
0C to +70C
1.65V - 2.2V
2.5V - 3.6V
Industrial
40C to +85C
1.65V - 2.2V
2.5V - 3.6V
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
AC TEST LOADS
Figure 1
Figure 2
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
IS62WV5128ALL
IS62WV5128BLL
(Unit)
(Unit)
Input Pulse Level
0.4V to V
DD
-0.2V
0.4V to V
DD
-0.3V
Input Rise and Fall Times
5 ns
5ns
Input and Output Timing
V
REF
V
REF
and Reference Level
Output Load
See Figures 1 and 2
See Figures 1 and 2
IS62WV5128ALL
IS62WV5128BLL
1.65 - 2.2V
2.5V - 3.6V
R1(
)
3070
3070
R2(
)
3150
3150
V
REF
0.9V
1.5V
V
TM
1.8V
2.8V
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128ALL
(1.65V - 2.2V)
Symbol Parameter
Test Conditions
Max.
Unit
70 ns
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
25
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
30
I
CC
1
Operating Supply
V
DD
= Max.,
CS1
= 0.2V Com.
10
mA
Current
WE
= V
DD
-0.2V
Ind.
10
f=1
MHZ
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.35
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.35
CS1
= V
IH
,
f = 1 MH
Z
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
15
A
Current (CMOS Inputs)
CS1
V
DD
0.2V,
Ind.
15
V
IN
V
DD
0.2V, or
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128BLL
(2.5V - 3.6V)
Symbol Parameter
Test Conditions
Max.
Max.
Unit
55 ns
70 ns
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
40
35
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
45
40
I
CC
1
Operating Supply
V
DD
= Max.,
CS1
= 0.2V Com.
15
15
mA
Current
WE
= V
DD
-0.2V
Ind.
15
15
f=1
MHZ
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.35
0.35
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.35
0.35
CS1
= V
IH
,
f = 1 MH
Z
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
15
15
A
Current (CMOS Inputs)
CS1
V
DD
0.2V,
Ind.
15
15
V
IN
V
DD
0.2V, or
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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