Copyright 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. B
04/29/04
IS32WV204816B
ISSI
FEATURES
Access time: 70ns
TTL compatible inputs and outputs; tri-state I/O
Wide Power supply voltage: 2.2V to 3.6V
CMOS Standby: 70
A (32-Mbit)
Deep Power Down Standby: 5
A (32-Mbit)
Deep Power-Down Mode: Data Invalid
Page Operation Mode: Four Word Access
Logic compatible with SRAM R/W (
WE
) pin.
Industrial Temperature Range: -40
o
C to 85
o
C
DESCRIPTION
The
ISSI IS32WV204816B is a high-performance CMOS
Pseudo Static RAM, organized as 2Meg x 16 bits.
ISSI CMOS technology provides high density, high speed
low power devices that features SRAM-like write timing.
Data is written to memory cells on the rising edge of the
WE
signal. With a page size of 4 words, the device has a page
access operation. The device also supports deep power-
down mode providing low-power standby.
The IS32WV204816B is packaged in a 48-pin mini-BGA
(6mm x 8mm).
2M x 16 (32-Mbit) PSEUDO STATIC RAM
MAY 2004
A0-A1
A2-A20
LB
CS2
WE
OE
2Mb x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
CS1
UB
I/O0-I/O15
FUNCTIONAL BLOCK DIAGRAM
IS32WV204816B
ISSI
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. B
04/29/04
PIN CONFIGURATIONS
PIN DESCRIPTIONS
A0-A20
Address Inputs
A0-A1
Page Address Inputs
I/O0 to I/O15 Data Input/Outputs
WE
Write Enable
OE
Output Enable
CS1
Chip Enable Input
CS2
Chip Select Input
LB, UB
Lower & Upper Data Byte Control Input
V
DD
Power
GND
Ground
NC
No Connection
48-pin mini-BGA (M) (6mm x 8mm)
48-pin mini-BGA (B) (6mm x 8mm)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
A4
A17
UB
CS2
A8
A12
A3
A7
LB
WE
A9
A13
A2
A6
A18
A20
A10
A14
A1
A5
NC
A19
A11
A15
A0
I/O
0
I/O
2
I/O
5
I/O
7
A16
CS1
I/O
8
I/O
10
I/O
12
I/O
14
NC
OE
I/O
9
I/O
11
V
DD
I/O
13
I/O
15
GND
I/O
1
I/O
3
I/O
4
I/O
6
GND
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
CS2
I/O
8
UB
A3
A4
CS1
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
A17
A7
I/O
3
V
DD`
V
DD
I/O
12
NC
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
A19
A12
A13
WE
I/O
7
A18
A8
A9
A10
A11
A20
IS32WV204816B
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. B
04/29/04
TRUTH TABLE
Function
CS1
CS2
OE
WE
LB
UB
ADD
I
/O0 to I/O7
I/O8 to I/O15
Power
Read: Word
L
H
L
H
L
L
X X
I/O
OUT
I/O
OUT
I
CC
1
Read: Lower Byte
L
H
L
H
L
H
X X
I/O
OUT
H
IGH
-Z
I
CC
1
Read: Upper Byte
L
H
L
H
H
L
X X
H
IGH
-Z
I/O
OUT
I
CC
1
Write: Word
L
H
X
L
L
L
X X
D
IN
D
IN
I
CC
1
Write: Lower
L
H
X
L
L
H
X X
D
IN
I
NVALID
I
CC
1
Write: Upper
L
H
X
L
H
L
X X
I
NVALID
D
IN
I
CC
1
Outputs Disabled
L
H
H
H
X
X
X X
H
IGH
-Z
H
IGH
-Z
I
SB
Standby
H
H
X
X
X
X
X
H
IGH
-Z
H
IGH
-Z
I
SB
Deep Power-Down Standby
H
L
X
X
X
X
X
H
IGH
-Z
H
IGH
-Z
I
SB
3
L = V
IL
, H =V
IH
, X = V
IL
or V
IH
, High-Z = High-impedance. XX = At
CS1
falling edge, all addresses (A2 to A20) are valid "
IN
".
Page address signals (A0 and A1) must be V
IH
or V
IL
, during entire cycle.
IS32WV204816B
ISSI
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. B
04/29/04
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
0.2 to V
DD
+3.6
V
V
DD
Supply Voltage
0.2 to V
DD
+3.6
V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
0.6
W
T
STG
Storage Temperature
55 to +150
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
Input Capacitance: A0-A20
10
pF
C
IN
2
Input Capacitance:
CS1
,
CS2,
OE
,
WE
,
LB
,
UB
10
pF
C
IO
Data Input/Output Capacitance: I/O0-I/O15
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25C, f = 1 MHz.
IS32WV204816B
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. B
04/29/04
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Min.
Max.
Unit
I
IL
Input Leakage Current
Any input 0V
V
IN
V
DD
1.0
1.0
A
Other inputs not under test = 0V
I
IO
Output Leakage Current
Output is disabled (Hi-Z)
1.0
1.0
A
0V
V
OUT
V
DD
V
OH
Output High Voltage Level
I
OH
= 0.5 mA
1.9
--
V
V
OL
Output Low Voltage Level
I
OL
= 1.0 mA
--
0.2
V
I
CC
1
Operating Current
CS1
=V
IH
, I
OUT
= 0mA
--
30
mA
CS1
Cycling, t
RC
= t
RC
(min.)
I
CC
2
Page Access
CS1
=V
IL
, CS2=V
IH
, I
OUT
= 0mA
--
25
mA
Operating Current
Page Add. Cycling, t
PC
(min.)
I
SB
1
Standby Current: TTL
CS1
=V
IH
,
CS2=V
IH
--
1
mA
I
SB
2
Standby Current: CMOS
CS1
=Vss-0.2V, CS2=V
DD
-0.2V
--
70
A
I
SB
3
Standby Current:
CS1
=0.2V
--
5
A
Deep Power-down
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
2.2
3.6
V
V
IH
Input High Voltage
2.0
--
V
DD
+ 03
V
V
IL
Input Low Voltage
0.2
--
0.4
V
V
DH
Data Retention Supply Voltage
2.0
--
3.0
V
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