ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

IS61LV2568

256K x 8 HIGH-SPEED CMOS STATIC RAM

DECEMBER 2000

FEATURES

· High-speed access times:

8, 10, 12 and 15 ns

· High-performance, low-power CMOS process

· Multiple center power and ground pins for

greater noise immunity

· Easy memory expansion with

CE and OE

options

CE power-down

· Low power: 540 mW @ 10 ns

36 mW standby mode

· TTL compatible inputs and outputs

· Single 3.3V ±10% power supply

· Packages available:

36-pin 400-mil SOJ
44-pin TSOP (Type II)

DESCRIPTION

The

ISSI

IS61LV2568 is a very high-speed, low power,

262,144-word by 8-bit CMOS static RAM. The IS61LV2568
is fabricated using

ISSI

's high-performance CMOS tech-

nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.

When

CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.

The IS61LV2568 operates from a single 3.3V power
supply and all inputs are TTL-compatible.

The IS61LV2568 is available in 36-pin 400-mil SOJ, and
44-pin TSOP (Type II) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A17

256K X 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A
12/19/00

IS61LV2568

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A

12/19/00

PIN CONFIGURATION

36-Pin SOJ

PIN DESCRIPTIONS

A0-A17

Address Inputs

Chip Enable Input

Output Enable Input

Write Enable Input

I/O0-I/O7

Bidirectional Ports

Vcc

Power

GND

Ground

No Connection

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

Supply voltage with Respect to GND

0.5 to +4.6

TERM

Terminal Voltage with Respect to GND

0.5 to Vcc + 0.5

BIAS

Temperature Under Bias

Com.

10 to +85

°C

Ind.

45 to +90

STG

Storage Temperature

65 to +150

°C

Power Dissipation

1.0

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

TRUTH TABLE

Mode

I/O Operation Vcc Current

Not Selected

High-Z

, I

(Power-down)

Output Disabled H

High-Z

Read

OUT

Write

I/O0

I/O1

Vcc

GND

I/O2

I/O3

A17

A16

A15

A14

A13

I/O7

I/O6

GND

Vcc

I/O5

I/O4

A10

A11

A12

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

NC
NC

A4
A3
A2
A1
A0

I/O0
I/O1

Vcc

GND

I/O2
I/O3

A17
A16
A15
A14
A13

NC
NC

NC
NC
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A9
A10
A11
A12
NC
NC
NC
NC

44
43
42
41

44-Pin TSOP (Type II)

IS61LV2568

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A
12/19/00

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol Parameter

Test Conditions

Min.Max.Unit

Output HIGH Voltage

= Min., I

= 4.0 mA

2.4

Output LOW Voltage

= Min., I

= 8.0 mA

0.4

Input HIGH Voltage

(1)

2.0

+ 0.3

Input LOW Voltage

(1)

0.3

0.8

Input Leakage

GND - V

- V

Com.

µA

Ind.

Output Leakage

GND - V

OUT

- V

, Outputs Disabled

Com.

µA

Ind.

Note:
1. V

(min) = 0.3V (DC); V

(min) = 2.0V (pulse width - 2.0 ns).

(max) = V

+ 0.3V (DC); V

(max) = Vcc + 2.0V (pulse width - 2.0 ns).

CAPACITANCE

(1,2)

Symbol

Parameter

Conditions

Max.Unit

Input Capacitance

= 0V

I/O

Input/Output Capacitance

OUT

= 0V

Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T

= 25°C, f = 1 MHz, Vcc = 3.3V.

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-8 ns

-10 ns

-12 ns

-15 ns

Symbol

Parameter

Test Conditions

Min.Max.

Min.Max. Unit

Vcc Operating

= Max.,

CE = V

Com.

150

125

110

Supply Current

OUT

= 0 mA, f = Max.

Ind.

160

135

120

100

TTL Standby

= Max.,Com.

Current

= V

or V

Ind.

(TTL Inputs)

CE · V

, f = max

CMOS Standby

= Max.,Com.

Current

CE - V

0.2V,Ind.

(CMOS Inputs)

> V

0.2V, or

- 0.2V, f = 0

Note:
1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to +70°C

3.3V ± 10%

Industrial

40°C to +85°C

3.3V ± 10%

IS61LV2568

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A

12/19/00

AC TEST LOADS

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0V to 3.0V

Input Rise and Fall Times

3 ns

Input and Output Timing

1.5V

and Reference Levels

Output Load

See Figures 1 and 2

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

- 8 ns

-10 ns

-12 ns

-15 ns

Symbol

Parameter

Min.

Max

Min.

Max.Min.Max.

Min.Max.

Unit

Read Cycle Time

Address Access Time

OHA

Output Hold Time

ACE

CE Access Time

DOE

OE Access Time

LZOE

(2)

OE to Low-Z Output

HZOE

(2)

OE to High-Z Output

LZCE

(2)

CE to Low-Z Output

HZCE

(2)

CE to High-Z Output

Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.

Figure 1

Figure 2

319

30 pF

Including

jig and

scope

353

OUTPUT

3.3V

319

5 pF

Including

jig and

scope

353

OUTPUT

3.3V

IS61LV2568

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A
12/19/00

OHA

DOE

LZOE

ACE

LZCE

HZOE

HIGH-Z

DATA VALID

CE_RD2.eps

ADDRESS

OUT

HZCE

READ CYCLE NO. 2

(1,3)

(

CE and OE Controlled)

Notes:
1.

WE is HIGH for a Read Cycle.

2. The device is continuously selected.

OE, CE = V

3. Address is valid prior to or coincident with

CE LOW transitions.

AC WAVEFORMS

READ CYCLE NO. 1

(1,2)

(Address Controlled) (

CE = OE = V

)

DATA VALID

READ1.eps

PREVIOUS DATA VALID

OHA

OUT

ADDRESS

IS61LV2568

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A

12/19/00

WRITE CYCLE SWITCHING CHARACTERISTICS

(1,2)

(Over Operating Range)

- 8 ns

-10 ns

-12 ns

-15 ns

Symbol

Parameter

Min.

Max

Min.

Max.Min.Max.

Min.Max.

Unit

Write Cycle Time

SCE

CE to Write End

6.5

Address Setup Time to

6.5

Write End

Address Hold from

Write End

Address Setup Time

PWE

WE Pulse Width (OE = HIGH)

PWE

WE Pulse Width (OE = LOW)

6.5

Data Setup to Write End

Data Hold from Write End

HZWE

(3)

WE LOW to High-Z Output

LZWE

(3)

WE HIGH to Low-Z Output

Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1.

2. The internal write time is defined by the overlap of

CE LOW and WE LOW. All signals must be in valid states to initiate a Write,

but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.

3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

AC WAVEFORMS
WRITE CYCLE NO. 1

(1,2)

(

CE Controlled, OE = HIGH or LOW)

DATA UNDEFINED

VALID ADDRESS

SCE

PWE1

PWE2

HIGH-Z

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

CE_WR1.eps

Note:
1. The internal Write time is defined by the overlap of

CE = LOW and WE = LOW. All signals must be in valid states to initiate a Write, but any

can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that
terminates the Write.

IS61LV2568

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A
12/19/00

WRITE CYCLE NO. 2

(1)

(

WE Controlled, OE = HIGH during Write Cycle)

Note:
1. The internal Write time is defined by the overlap of

CE = LOW and WE = LOW. All signals must be in valid states to initiate a Write, but any

can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that
terminates the Write.

DATA UNDEFINED

LOW

VALID ADDRESS

PWE1

HIGH-Z

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

CE_WR2.eps

AC WAVEFORMS

WRITE CYCLE NO. 3

(

WE Controlled: OE is LOW During Write Cycle)

Note:
1. The internal Write time is defined by the overlap of

CE = LOW and WE = LOW. All signals must be in valid states to initiate a Write, but any

can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that
terminates the Write.

DATA UNDEFINED

VALID ADDRESS

LOW

PWE2

HIGH-Z

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

CE_WR3.eps

IS61LV2568

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev.A

12/19/00

ISSI

Integrated Silicon Solution, Inc.

2231 Lawson Lane

Santa Clara, CA 95054

Tel: 1-800-379-4774
Fax: (408) 588-0806

E-mail: sales@issi.com

www.issi.com

ORDERING INFORMATION

Commercial Range: 0°C to +70°C

Speed (ns)

Order Part No.Package

IS61LV2568-8K

400-mil Plastic SOJ

IS61LV2568-8T

TSOP (Type II)

IS61LV2568-10K

400-mil Plastic SOJ

IS61LV2568-10T

TSOP (Type II)

IS61LV2568-12K

400-mil Plastic SOJ

IS61LV2568-12T

TSOP (Type II)

IS61LV2568-15K

400-mil Plastic SOJ

IS61LV2568-15T

TSOP (Type II)

ORDERING INFORMATION

Industrial Range: 40°C to +85°C

Speed (ns)

Order Part No.Package

IS61LV2568-8KI

400-mil Plastic SOJ

IS61LV2568-8TI

TSOP (Type II)

IS61LV2568-10KI

400-mil Plastic SOJ

IS61LV2568-10TI

TSOP (Type II)

IS61LV2568-12KI

400-mil Plastic SOJ

IS61LV2568-12TI

TSOP (Type II)

IS61LV2568-15KI

400-mil Plastic SOJ

IS61LV2568-15TI

TSOP (Type II)

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