Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G
01/14/00

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

IS62C1024

ISSI

DESCRIPTION

The

ISSI

IS62C1024 is a low power,131,072-word by

8-bit CMOS static RAM. It is fabricated using

ISSI

high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.

When

CE1

is HIGH or CE2 is LOW (deselected), the

device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip
Enable inputs,

CE1

and CE2. The active LOW Write

Enable (

) controls both writing and reading of the

memory.

The IS62C1024 is available in 32-pin 525-mil plastic SOP
and TSOP (type 1) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

CE1

512 X 2048

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

CE2

128K x 8 HIGH-SPEED CMOS STATIC RAM

JANUARY 2000

FEATURES

· High-speed access time: 35, 45, 55, 70 ns

· Low active power: 450 mW (typical)

· Low standby power: 500 µW (typical) CMOS

standby

· Output Enable (

) and two Chip Enable

(

CE1

and CE2) inputs for ease in applications

· Fully static operation: no clock or refresh

required

· TTL compatible inputs and outputs

· Single 5V (±10%) power supply

IS62C1024

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G

01/14/00

A16

A14

A12

I/O0

I/O1

I/O2

GND

VCC

A15

CE2

A13

A11

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

ISSI

62C1024

PIN CONFIGURATION

32-Pin SOP

32-Pin TSOP (Type 1)

PIN DESCRIPTIONS

A0-A16

Address Inputs

CE1

Chip Enable 1 Input

CE2

Chip Enable 2 Input

Output Enable Input

Write Enable Input

I/O0-I/O7

Input/Output

Vcc

Power

GND

Ground

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to +70°C

5V ± 10%

Industrial

40°C to +85°C

5V ± 10%

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

A11

A9
A8

A13

CE2

A15

VCC

A16
A14
A12

A7
A6
A5
A4

OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3

IS62C1024

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G
01/14/00

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

TERM

Terminal Voltage with Respect to GND

0.5 to +7.0

BIAS

Temperature Under Bias

10 to +85

°C

STG

Storage Temperature

65 to +150

°C

Power Dissipation

1.5

OUT

DC Output Current (LOW)

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-

nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

CAPACITANCE

(1,2)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Output Capacitance

OUT

= 0V

Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T

= 25°C, f = 1 MHz, Vcc = 5.0V.

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 1.0 mA

2.4

Output LOW Voltage

= Min., I

= 2.1 mA

0.4

Input HIGH Voltage

2.2

+ 0.5

Input LOW Voltage

(1)

0.3

0.8

Input Leakage

GND

Com.

µA

Ind.

Output Leakage

GND

OUT

Com.

µA

Ind.

Notes:
1. V

= 3.0V for pulse width less than 10 ns.

TRUTH TABLE

Mode

CE1

CE2

I/O Operation

Vcc Current

Not Selected

High-Z

, I

(Power-down)

High-Z

, I

Output Disabled H

High-Z

Read

OUT

Write

IS62C1024

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G

01/14/00

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0V to 3.0V

Input Rise and Fall Times

5 ns

Input and Output Timing

1.5V

and Reference Level

Output Load

See Figures 1a and 1b

AC TEST LOADS

Figure 1a.

Figure 1b.

480

5 pF

Including

jig and

scope

255

OUTPUT

480

100 pF

Including

jig and

scope

255

OUTPUT

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-35

-45

-55

-70

Symbol Parameter

Test Conditions

Min. Max.

Unit

Vcc Dynamic Operating

= Max.,

= V

Com.

150

135

120

Supply Current

OUT

= 0 mA, f = f

MAX

Ind.

160

145

130

100

TTL Standby Current

= Max.,

Com.

(TTL Inputs)

= V

or V

CE1

, Ind.

or CE2

, f = 0

CMOS Standby

= Max.,

Com.

Current (CMOS Inputs)

CE1

0.2V,

Ind.

CE2

0.2V, V

0.2V,

or V

0.2V, f = 0

Notes:
1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

IS62C1024

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G
01/14/00

DATA VALID

OHA

DOUT

ADDRESS

AC WAVEFORMS

READ CYCLE NO. 1

(1,2)

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-35

-45

-55

-70

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Read Cycle Time

Address Access Time

OHA

Output Hold Time

ACE

CE1

Access Time

ACE

CE2 Access Time

DOE

Access Time

LZOE

(2)

to Low-Z Output

HZOE

(2)

to High-Z Output

LZCE

(2)

CE1

to Low-Z Output

LZCE

(2)

CE2 to Low-Z Output

HZCE

(2)

CE1

or CE2 to High-Z Output

Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

IS62C1024

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G

01/14/00

WRITE CYCLE SWITCHING CHARACTERISTICS

(1,3)

(Over Operating Range, Standard and Low Power)

-35

-45

-55

-70

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Write Cycle Time

SCE

CE1

to Write End

SCE

CE2 to Write End

Address Setup Time to Write End

Address Hold from Write End

Address Setup Time

PWE

(4)

Pulse Width

Data Setup to Write End

Data Hold from Write End

HZWE

(2)

LOW to High-Z Output

LZWE

(2)

HIGH to Low-Z Output

Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of

CE1

LOW, CE2 HIGH and

LOW. All signals must be in valid states to

initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.

4. Tested with

HIGH.

OHA

DOE

LZOE

ACE1/

ACE2

LZCE1/

LZCE2

HZOE

HIGH-Z

DATA VALID

HZCE

ADDRESS

CE1

CE2

DOUT

Notes:
1.

is HIGH for a Read Cycle.

2. The device is continuously selected.

CE1

= V

, CE2 = V

3. Address is valid prior to or coincident with

CE1

LOW and CE2 HIGH transitions.

READ CYCLE NO. 2

(1,3)

IS62C1024

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G
01/14/00

WRITE CYCLE NO. 2 (

CE1

, CE2 Controlled)

(1,2)

HIGH-Z

DATA UNDEFINED

DATA-IN VALID

SCE1

SCE2

PWE

(4)

HZWE

LZWE

ADDRESS

DIN

CE1

CE2

DOUT

Notes:
1. The internal write time is defined by the overlap of

CE1

LOW, CE2 HIGH and

LOW. All signals must be in valid states to

initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.

2. I/O will assume the High-Z state if

= V

DATA-IN VALID

DATA UNDEFINED

SCE1

SCE2

PWE

(4)

HZWE

HIGH-Z

LZWE

ADDRESS

CE1

CE2

DOUT

DIN

AC WAVEFORMS

WRITE CYCLE NO. 1 (

Controlled)

(1,2)

IS62C1024

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. G

01/14/00

ISSI

Integrated Silicon Solution, Inc.

2231 Lawson Lane

Santa Clara, CA 95054

Tel: 1-800-379-4774

Fax: (408) 588-0806

E-mail: sales@issi.com

www.issi.com

ORDERING INFORMATION
Commercial Range: 0°C to +70°C

Speed (ns)

Order Part No.

Package

IS62C1024-35Q

525-mil Plastic SOP

IS62C1024-35T

TSOP, Type 1

IS62C1024-45Q

525-mil Plastic SOP

IS62C1024-45T

TSOP, Type 1

IS62C1024-55Q

525-mil Plastic SOP

IS62C1024-55T

TSOP, Type 1

IS62C1024-70Q

525-mil Plastic SOP

IS62C1024-70T

TSOP, Type 1

Industrial Range: 40°C to +85°C

Speed (ns)

Order Part No.

Package

IS62C1024-35QI

525-mil Plastic SOP

IS62C1024-35TI

TSOP, Type 1

IS62C1024-45QI

525-mil Plastic SOP

IS62C1024-45TI

TSOP, Type 1

IS62C1024-55QI

525-mil Plastic SOP

IS62C1024-55TI

TSOP, Type 1

IS62C1024-70QI

525-mil Plastic SOP

IS62C1024-70TI

TSOP, Type 1

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ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IS62C1024-35QI