IS63LV1024
IS63LV1024L

ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. H
12/14/05

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT

FEATURES

· High-speed access times:

8, 10, 12 ns

· High-performance, low-power CMOS process

· Multiple center power and ground pins for

greater noise immunity

· Easy memory expansion with

and

options

power-down

· Fully static operation: no clock or refresh

required

· TTL compatible inputs and outputs

· Single 3.3V power supply

· Packages available:

32-pin 300-mil SOJ
32-pin 400-mil SOJ
32-pin TSOP (Type II)

32-pin STSOP (Type I)

36-pin BGA (8mmx10mm)

· Lead-free Available

DESCRIPTION

The

ISSI

IS63LV1024/IS63LV1024L is a very high-speed,

low power, 131,072-word by 8-bit CMOS static RAM in
revolutionary pinout. The IS63LV1024/IS63LV1024L is fab-
ricated using

ISSI

's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
power consumption devices.

When

CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.

The IS63LV1024/IS63LV1024L operates from a single 3.3V
power supply and all inputs are TTL-compatible.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

128K X 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VDD

I/O

DATA

CIRCUIT

I/O0-I/O7

DECEMBER 2005

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. H

12/14/05

IS63LV1024
IS63LV1024L

ISSI

PIN CONFIGURATION

32-Pin SOJ

I/O0

I/O1

VDD

GND

I/O2

I/O3

A16

A15

A14

A13
OE
I/O7

I/O6

GND

VDD

I/O5

I/O4

A12

A11

A10

PIN DESCRIPTIONS

A0-A16

Address Inputs

Chip Enable Input

Output Enable Input

Write Enable Input

I/O0-I/O7

Data Inputs/Outputs

Power

GND

Ground

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

A0
A1
A2
A3

I/O0
I/O1

VDD

GND

I/O2
I/O3

A4
A5
A6
A7

A16
A15
A14
A13
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A12
A11
A10
A9
A8

PIN CONFIGURATION

32-Pin TSOP (Type II) (T)
32-Pin STSOP (Type I) (H)

PIN CONFIGURATION

36-mini BGA (B) (8 mm x 10 mm)

1 2 3 4 5 6

I/O4

I/O

I/O5

I/O

GND

VDD

GND

I/O6

I/O

I/O7

A16

A15

I/O

A10

A11

A12

A13

A14

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. H
12/14/05

IS63LV1024
IS63LV1024L

ISSI

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

TERM

Terminal Voltage with Respect to GND

0.5 to V

+ 0.5

STG

Storage Temperature

65 to +150

°C

Power Dissipation

1.0

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.

TRUTH TABLE

Mode

I/O Operation

Current

Not Selected

High-Z

, I

(Power-down)

Output Disabled

High-Z

, I

Read

OUT

, I

Write

, I

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 4.0 mA

2.4

Output LOW Voltage

= Min., I

= 8.0 mA

0.4

Input HIGH Voltage

2.2

+ 0.3

Input LOW Voltage

(1)

0.3

0.8

Input Leakage

GND

Com.

µA

Ind.

Output Leakage

GND

OUT

, Outputs Disabled

Com.

µA

Ind.

Notes:
1. V

= 3.0V for pulse width less than 10 ns.

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to +70°C

3.3V ± 0.3V

Industrial

40°C to +85°C

3.3V ± 0.15V

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. H

12/14/05

IS63LV1024
IS63LV1024L

ISSI

CAPACITANCE

(1,2)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

I/O

Input/Output Capacitance

OUT

= 0V

Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T

= 25°C, f = 1 MHz, V

= 3.3V.

IS63LV1024L POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-8 ns

-10 ns

-12 ns

Symbol Parameter

Test Conditions

Min. Max.

Unit

Operating

= Max.,

CE = V

Com.

100

Supply Current

OUT

= 0 mA, f = Max.

Ind.

110

105

100

typ.

(2)

TTL Standby

= Max.,

Com.

Current

= V

or V

Ind.

(TTL Inputs)

, f = Max

TTL Standby

= Max.,

Com.

Current

= V

or V

Ind.

(TTL Inputs)

, f = 0

CMOS Standby

= Max.,

Com.

Current

0.2V,

Ind.

1.5

typ.

(2)

0.05

(CMOS Inputs)

0.2V, or

0.2V, f = 0

Notes:
1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at V

= 3.3V, T

= 25

C. Not 100% tested.

IS63LV1024 POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-8 ns

-10 ns

-12 ns

Symbol Parameter

Test Conditions

Min. Max.

Unit

Operating

= Max.,

CE = V

Com.

160

150

130

Supply Current

OUT

= 0 mA, f = Max.

Ind.

170

160

140

typ.

(2)

105

Ind. (@15 ns)

TTL Standby

= Max.,

Com.

Current

= V

or V

Ind.

(TTL Inputs)

, f = Max

TTL Standby

= Max.,

Com.

Current

= V

or V

Ind.

(TTL Inputs)

, f = 0

CMOS Standby

= Max.,

Com.

Current

0.2V,

Ind.

typ.

(2)

0.5

(CMOS Inputs)

0.2V, or

0.2V, f = 0

Notes:
1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at V

= 3.3V, T

= 25

C. Not 100% tested.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. H
12/14/05

IS63LV1024
IS63LV1024L

ISSI

AC TEST LOADS

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0V to 3.0V

Input Rise and Fall Times

3 ns

Input and Output Timing

1.5V

and Reference Levels

Output Load

See Figures 1 and 2

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-8 ns

-10 ns

-12 ns

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Read Cycle Time

Address Access Time

OHA

Output Hold Time

ACE

CE Access Time

DOE

OE Access Time

LZOE

(2)

OE to Low-Z Output

HZOE

(2)

OE to High-Z Output

LZCE

(2)

CE to Low-Z Output

HZCE

(2)

CE to High-Z Output

CE to Power Up Time

CE to Power Down Time

Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V

loading specified in Figure 1.

2. Tested with the loading specified in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

Figure 1

OUTPUT

= 1.5V

OUT

= 50

317

5 pF

Including

jig and

scope

351

OUTPUT

3.3V

Figure 2

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