Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS64C6416
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. 00A
01/07/03
FEATURES
High-speed access time: 15 and 20 ns
CMOS low power operation
TTL compatible interface levels
Single 5V 10% power supply
Fully static operation: no clock or refresh
required
Three state outputs
Industrial temperature available
Available in 44-pin SOJ package and
44-pin TSOP (Type II)
DESCRIPTION
The
ISSI
IS64C6416 is a high-speed, 1,048,576-bit static RAM
organized as 65,536 words by 16 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields access times as fast as 10 ns with low power consump-
tion.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS64C6416 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
ADVANCED INFORMATION
JANUARY 2003
A0-A15
CE
OE
WE
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
IS64C6416
ISSI
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. 00A
01/07/03
PIN CONFIGURATIONS
44-Pin SOJ
PIN DESCRIPTIONS
A0-A15
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
Vcc
Power
GND
Ground
44-Pin TSOP (Type II)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
1
2
3
4
5
6
7
8
9
10
11
12
IS64C6416
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. 00A
01/07/03
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
Vcc Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
X
X
High-Z
High-Z
I
CC
1
, I
CC
2
X
L
X
H
H
High-Z
High-Z
Read
H
L
L
L
H
D
OUT
High-Z
I
CC
1
, I
CC
2
H
L
L
H
L
High-Z
D
OUT
H
L
L
L
L
D
OUT
D
OUT
Write
L
L
X
L
H
D
IN
High-Z
I
CC
1
, I
CC
2
L
L
X
H
L
High-Z
D
IN
L
L
X
L
L
D
IN
D
IN
OPERATING RANGE
Options
Ambient Temperature
V
CC
A1
40C to +85C
5V 10%
A2
40C to +105C
5V 10%
A3
40C to +125C
5V 10%
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to +7.0
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
IS64C6416
ISSI
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. 00A
01/07/03
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-15
-20
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
A1
--
250
--
--
mA
Supply Current
I
OUT
= 0 mA, f =
MAX
A2
--
--
--
255
A3
--
--
--
260
I
SB
1
TTL Standby Current
V
CC
= Max.,
A1
--
50
--
--
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
A2
--
--
--
55
CE
>
V
IH
, f = max
A3
--
--
--
55
I
SB
2
CMOS Standby
V
CC
= Max.,
A1
--
5
--
--
mA
Current (CMOS Inputs)
CE
>
V
CC
0.2V,
A2
--
--
--
10
V
IN
>
V
CC
0.2V, or
A3
--
--
--
15
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= 4.0 mA
2.4
--
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2.5
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
0.5
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
2
2
A
I
LO
Output Leakage
GND
V
OUT
V
CC
, Outputs Disabled
2
2
A
Notes:
1. V
IL
(min.) = 3.0V for pulse width less than 10 ns.
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