Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. A
06/25/03

IS64LV25616AL

ISSI

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

FEATURES

· High-speed access time: 10, 12 ns

· CMOS low power operation

· Low stand-by power:

Less than 5 m

(typ.) CMOS stand-by

· TTL compatible interface levels

· Single 3.3V power supply

· Fully static operation: no clock or refresh

required

· Three state outputs

· Data control for upper and lower bytes

· Industrial temperature available

· Temperature Offerings:

Option A1: 40

C to +85

Option A2: 40

C to +105

Option A3: 40

C to +125

256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION

The

ISSI

IS64LV25616AL is a high-speed, 4,194,304-bit

static RAM organized as 262,144 words by 16 bits. It is
fabricated using

ISSI

's high-performance CMOS technol-

ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be
reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,

and

. The active LOW

Write Enable (

) controls both writing and reading of the

memory. A data byte allows Upper Byte (

) and Lower

Byte (

) access.

The IS64LV25616AL is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (8mm x 10mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A17

CE
OE

256K x 16

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

JUNE 2003

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. A

06/25/03

IS64LV25616AL

ISSI

TRUTH TABLE

I/O PIN

Mode

I/O0-I/O7

I/O8-I/O15

Current

Not Selected

High-Z

, I

Output Disabled

High-Z

Read

OUT

High-Z

OUT

Write

High-Z

PIN DESCRIPTIONS

A0-A17

Address Inputs

I/O0-I/O15

Data Inputs/Outputs

Chip Enable Input

Output Enable Input

Write Enable Input

Lower-byte Control (I/O0-I/O7)

Upper-byte Control (I/O8-I/O15)

No Connection

Power

GND

Ground

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A0
A1
A2
A3
A4

I/O0
I/O1
I/O2
I/O3

GND

I/O4
I/O5
I/O6
I/O7

A5
A6
A7
A8
A9

A17
A16
A15

OE
UB
LB

I/O15
I/O14
I/O13
I/O12
GND
V

I/O11
I/O10
I/O9
I/O8
NC
A14
A13
A12
A11
A10

PIN CONFIGURATIONS

44-Pin TSOP (Type II)

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. A
06/25/03

IS64LV25616AL

ISSI

1 2 3 4 5 6

I/O

GND

I/O

A17

I/O

A16

I/O

GND

I/O

A14

A15

I/O

A12

A13

I/O

A10

A11

PIN CONFIGURATIONS

48-Pin mini BGA

PIN DESCRIPTIONS

A0-A17

Address Inputs

I/O0-I/O15

Data Inputs/Outputs

Chip Enable Input

Output Enable Input

Write Enable Input

Lower-byte Control (I/O0-I/O7)

Upper-byte Control (I/O8-I/O15)

No Connection

Power

GND

Ground

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. A

06/25/03

IS64LV25616AL

ISSI

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol

Parameter

Test Conditions

Options

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 4.0 mA

2.4

Output LOW Voltage

= Min., I

= 8.0 mA

0.4

Input HIGH Voltage

2.0

+ 0.3

Input LOW Voltage

(1)

-0.3

0.8

Input Leakage

GND

-2

µA

-5

-10

Output Leakage

GND

OUT

-2

µA

Outputs Disabled

-5

-10

Notes:
1. V

(min.) = 2.0V for pulse width less than 10 ns.

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

TERM

Terminal Voltage with Respect to GND

0.5 to V

+0.5

Related to GND

0.3 to +4.0

STG

Storage Temperature

65 to +150

°C

Power Dissipation

1.0

Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.

OPERATING RANGE

Options

Ambient Temperature

40°C to +85°C

3.3V +10%, -5%

40°C to +105°C

3.3V +10%, -5%

40°C to +125°C

3.3V +10%, -5%

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. A
06/25/03

IS64LV25616AL

ISSI

CAPACITANCE

(1)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Input/Output Capacitance

OUT

= 0V

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-10

-12

Symbol Parameter

Test Conditions

Options

Min. Max.

Unit

Dynamic Operating

= Max.,

100

Supply Current

OUT

= 0 mA, f = f

MAX

110

120

TTL Standby Current

= Max.,

(TTL Inputs)

= V

or V

, f = f

MAX

TTL Standby Current

= Max.,

(TTL Inputs)

= V

or V

, f = 0

CMOS Standby

= Max.,

Current (CMOS Inputs)

0.2V,

0.2V, or

0.2V, f = 0

typ

(2)

Note:
1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product

in development

2. Typical values are measured at V

= 3.3V, T

= 25

C and not 100% tested.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IS64LV25616AL-12BA2

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IS64LV25616AL-12BA2