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Электронный компонент: IS64LV25616AL-12BA2

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Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. A
06/25/03
IS64LV25616AL
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
High-speed access time: 10, 12 ns
CMOS low power operation
Low stand-by power:
Less than 5 m
A
(typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Temperature Offerings:
Option A1: 40
o
C to +85
o
C
Option A2: 40
o
C to +105
o
C
Option A3: 40
o
C to +125
o
C
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS64LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS64LV25616AL is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
JUNE 2003
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
06/25/03
IS64LV25616AL
ISSI
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
X
X
High-Z
High-Z
I
CC
X
L
X
H
H
High-Z
High-Z
Read
H
L
L
L
H
D
OUT
High-Z
I
CC
H
L
L
H
L
High-Z
D
OUT
H
L
L
L
L
D
OUT
D
OUT
Write
L
L
X
L
H
D
IN
High-Z
I
CC
L
L
X
H
L
High-Z
D
IN
L
L
X
L
L
D
IN
D
IN
PIN DESCRIPTIONS
A0-A17
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
A3
A4
CE
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A5
A6
A7
A8
A9
A17
A16
A15
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A14
A13
A12
A11
A10
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. A
06/25/03
1
2
3
4
5
6
7
8
9
10
11
12
IS64LV25616AL
ISSI
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
NC
I/O
8
UB
A3
A4
CE
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
A17
A7
I/O
3
V
DD
V
DD
I/O
12
NC
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11
NC
PIN CONFIGURATIONS
48-Pin mini BGA
PIN DESCRIPTIONS
A0-A17
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
06/25/03
IS64LV25616AL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Options
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 4.0 mA
2.4
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
-0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
A1
-2
2
A
A2
-5
5
A3
-10
10
I
LO
Output Leakage
GND
V
OUT
V
DD
,
A1
-2
2
A
Outputs Disabled
A2
-5
5
A3
-10
10
Notes:
1. V
IL
(min.) = 2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to V
DD
+0.5
V
V
DD
V
DD
Related to GND
0.3 to +4.0
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Options
Ambient Temperature
V
DD
A1
40C to +85C
3.3V +10%, -5%
A2
40C to +105C
3.3V +10%, -5%
A3
40C to +125C
3.3V +10%, -5%
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. A
06/25/03
1
2
3
4
5
6
7
8
9
10
11
12
IS64LV25616AL
ISSI
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
Symbol Parameter
Test Conditions
Options
Min. Max.
Min. Max.
Unit
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
A1
--
100
--
--
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
A2
--
--
--
110
A3
--
--
--
120
I
SB
TTL Standby Current
V
DD
= Max.,
A1
--
50
--
--
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
A2
--
--
--
55
CE
V
IH
, f = f
MAX
.
A3
--
--
--
60
I
SB
1
TTL Standby Current
V
DD
= Max.,
A1
--
20
--
--
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
A2
--
--
--
30
CE
V
IH
, f = 0
A3
--
--
--
40
I
SB
2
CMOS Standby
V
DD
= Max.,
A1
--
15
--
--
mA
Current (CMOS Inputs)
CE
V
DD
0.2V,
A2
--
--
--
25
V
IN
V
DD
0.2V, or
A3
--
--
--
35
V
IN
0.2V, f = 0
typ
(2)
--
5
--
5
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product
in development
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.