Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. 00B
04/03/03
IS64LV6416AL
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
FUNCTIONAL BLOCK DIAGRAM
64K x 16 HIGH-SPEED CMOS STATIC RAM
PRELIMINARY INFORMATION
APRIL 2003
FEATURES
High-speed access time: 20 ns, 25ns
CMOS low power operation:
38 mW (typical) operating
10 W (typical) standby
TTL compatible interface levels
Single power supply:
2.6V
(-
5%/+10%) (20ns)
2.5V
(-
5%/+10%) (25ns)
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Automotive temperature available
DESCRIPTION
The
ISSI
IS64LV6416AL is a high-speed, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with inno-
vative circuit design techniques, yields access times as
fast as 20ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS64LV6416AL is packaged in the JEDEC standard
44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).
A0-A15
CE
OE
WE
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. 00B
04/03/03
IS64LV6416AL
ISSI
PIN CONFIGURATIONS
44-Pin TSOP
48-Pin mini BGA (6mm x 8mm)
PIN DESCRIPTIONS
A0-A15
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
NC
I/O
8
UB
A3
A4
CE
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
NC
A7
I/O
3
V
DD
V
DD
I/O
12
NC
NC
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. 00B
04/03/03
IS64LV6416AL
ISSI
OPERATING RANGE (V
DD
)
Option
Ambient Temperature
V
DD
(20ns)
V
DD
(25ns)
A1
40C to +85C
2.6V -5%/+10%
2.5V -5%/+10%
A2
40C to +105C
2.6V -5%/+10%
2.5V -5%/+10%
A3
40C to +125C
2.6V -5%/+10%
2.5V -5%/+10%
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to V
DD
+0.5
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.5
W
V
DD
V
DD
Related to GND
-0.2 to +3.9
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
X
X
High-Z
High-Z
I
CC
X
L
X
H
H
High-Z
High-Z
Read
H
L
L
L
H
D
OUT
High-Z
I
CC
H
L
L
H
L
High-Z
D
OUT
H
L
L
L
L
D
OUT
D
OUT
Write
L
L
X
L
H
D
IN
High-Z
I
CC
L
L
X
H
L
High-Z
D
IN
L
L
X
L
L
D
IN
D
IN
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. 00B
04/03/03
IS64LV6416AL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 1.0 mA
2.2
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
1.7
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.7
V
I
LI
Input Leakage
GND
V
IN
V
DD
1
1
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
1
1
A
Notes:
1. V
IL
(min.) = 2.0V for pulse width less than 10 ns.
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-20 ns
-25 ns
Symbol Parameter
Test Conditions
Options
Min.
Max.
Min.
Max.
Unit
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
A1
--
25
--
25
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
A2
--
30
--
25
A3
--
35
--
30
typ
(2)
--
15
--
12
I
CC
1
Operating Supply
V
DD
= Max.,
A1
--
5
--
5
mA
Current
Iout = 0mA, f = 0
A2
--
5
--
5
A3
--
10
--
10
I
SB
1
TTL Standby Current
V
DD
= Max.,
A1
--
2
--
2
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
A2
--
3
--
3
CE
V
IH
, f = 0
A3
--
4
--
4
I
SB
2
CMOS Standby
V
DD
= Max.,
A1
--
20
--
20
uA
Current (CMOS Inputs)
CE
V
DD
0.2V,
A2
--
20
--
20
V
IN
V
DD
0.2V, or
A3
--
25
--
25
V
IN
0.2V, f = 0
typ
(2)
--
4
--
4
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=2.5V, T
A
=25
o
C. Not 100% tested.
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