Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. A
02/13/06
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
1M x 16 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
APRIL 2006
FEATURES
High-speed access times:
8, 10, 20 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for greater
noise immunity
Easy memory expansion with
CE and OE op-
tions
CE power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single power supply
V
DD
1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for V
DD
1.65V to 2.2V
V
DD
2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for V
DD
2.4V to 3.6V
speed = 8ns for V
DD
3.3V + 5%
Packages available:
48-ball miniBGA (9mm x 11mm)
48-pin TSOP (Type I)
Industrial and Automotive Temperature Support
Lead-free available
Data control for upper and lower bytes
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The
ISSI
IS61WV102416ALL/BLL and IS64WV102416BLL
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using
ISSI
's high-perform-
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-perfor-
mance and low power consumption devices.
When
CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE and OE. The active LOW
Write Enable (
WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB) and Lower
Byte (
LB) access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
A0-A19
CE
OE
WE
1024K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
PIN DESCRIPTIONS
A0-A19
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
48-pin mini BGA (9mmx11mm)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
NC
I/O
8
UB
A3
A4
CE
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
A17
A7
I/O
3
VDD
VDD
I/O
12
NC
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
A19
A12
A13
WE
I/O
7
A18
A8
A9
A10
A11
NC
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
PIN DESCRIPTIONS
A0-A19
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
48-pin TSOP-I (12mm x 20mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A4
A3
A2
A1
A0
NC
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
NC
A19
A18
A17
A16
A15
A5
A6
A7
A8
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A9
A10
A11
A12
A13
A14
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to V
DD
+ 0.5
V
V
DD
V
DD
Relates to GND
0.3 to 4.0
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25C, f = 1 MHz, V
DD
= 3.3V.
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
X
X
High-Z
High-Z
I
CC
X
L
X
H
H
High-Z
High-Z
Read
H
L
L
L
H
D
OUT
High-Z
I
CC
H
L
L
H
L
High-Z
D
OUT
H
L
L
L
L
D
OUT
D
OUT
Write
L
L
X
L
H
D
IN
High-Z
I
CC
L
L
X
H
L
High-Z
D
IN
L
L
X
L
L
D
IN
D
IN
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
OPERATING RANGE (V
DD
) (IS61WV102416BLL)
(1)
Range
Ambient Temperature
V
DD
(8 n
S
)
V
DD
(10 n
S
)
Commercial
0C to +70C
3.3V + 5%
2.4V-3.6V
Industrial
40C to +85C
3.3V + 5%
2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of
3.3V + 5%, the device meets 8ns.
OPERATING RANGE (V
DD
) (IS64WV102416BLL)
Range
Ambient Temperature
V
DD
(10 n
S
)
Automotive
40C to +125C
2.4V-3.6V
OPERATING RANGE (V
DD
) (IS61WV102416ALL)
Range
Ambient Temperature
V
DD
(20 n
S
)
Commercial
0C to +70C
1.65V-2.2V
Industrial
40C to +85C
1.65V-2.2V
Automotive
40C to +125C
1.65V-2.2V
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