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Электронный компонент: 10N100A

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1996 IXYS All rights reserved
TO-247 AD
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1000
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
1000
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
20
A
I
C90
T
C
= 90
C
10
A
I
CM
T
C
= 25
C, 1 ms
40
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 150
I
CM
= 20
A
(RBSOA)
Clamped inductive load, L = 300
H
@ 0.8 V
CES
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V
1000
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
250
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
10N100
3.5
V
10N100A
4.0
V
V
CES
I
C25
V
CE(sat)
Low V
CE(sat)
IGBT
IXGH
10
N100
1000 V
20 A
3.5 V
High speed IGBT
IXGH
10
N100A
1000 V
20 A
4.0 V
Features
l
International standard package
JEDEC TO-247 AD
l
2nd generation HDMOS
TM
process
l
Low V
CE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Voltage rating guaranteed at high
temperature (125
C)
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
High power density
93004D (3/96)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 10N100
IXGH 10N100A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
4
8
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
750
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
150
pF
C
res
30
pF
Q
g
52
70
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
25
nC
Q
gc
24
45
nC
t
d(on)
100
ns
t
ri
200
ns
t
d(off)
550
900
ns
t
fi
10N100
800
ns
10N100A
500
ns
E
off
10N100A
2
3
mJ
t
d(on)
100
ns
t
ri
200
ns
E
on
1.1
mJ
t
d(off)
600
1000
ns
t
fi
10N100
1250
2000
ns
10N100A
950
1000
ns
E
off
10N100
5.0
mJ
10N100A
2.5
mJ
R
thJC
1.2 K/W
R
thCK
0.25
K/W
IXGH 10N100 and IXGH 10N100A characteristic curves are located on the
IXGH 10N100U1 and IXGH 10N100AU1 data sheets.
TO-247 AD Outline
Inductive load, T
J
= 25


C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125


C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector