1998 IXYS All rights reserved
G
E
TAB
V
CES
= 600 V
I
C25
= 24 A
V
CE(sat)
= 2.5 V
Low V
CE(sat)
IGBT
with Diode
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
24
A
I
C90
T
C
= 90
C
12
A
I
CM
T
C
= 25
C, 1 ms
48
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 150
I
CM
= 24
A
(RBSOA)
Clamped inductive load, L = 300
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
5
s
(SCSOA)
R
G
= 82
,
non repetitive
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Weight
2
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10 s
260
C
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
TO-263AA
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 750
A, V
CE
= V
GE
3.5
6.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
2.5 mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
IXSA 12N60AU1
Features
International standard package
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High peak current handling capability
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Applications
AC motor speed control
Brushless motor controls
Servo & robotic controls
Advantages
High power density
96540A (9/98)
Preliminary data sheet
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072 4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Inductive load, T
J
= 125C
I
C
= 12 A, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= 22
Switching times may increase for
V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Min. Recommended Footprint
Dimensions in inch and mm
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90;
V
CE
= 10 V,
3.3
S
Pulse test, t
300
s, duty cycle
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
TBD
A
C
ies
TBD
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
TBD
pF
C
res
TBD
pF
Q
g
TBD
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
TBD
nC
Q
gc
TBD
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
100
300 ns
t
fi
200
360 ns
E
off
1.0
2.0 mJ
t
d(on)
30
ns
t
ri
30
ns
E
on
0.5
mJ
t
d(off)
150
ns
t
fi
300
ns
E
off
1.5
mJ
R
thJC
1.25 K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.75
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 64 A/
s
2.5
A
t
rr
V
R
= 360 V
T
J
=100
C
165
ns
I
F
= 1 A; -di/dt = 50 A/
s; V
R
= 30 V
T
J
= 25
C
35
50
ns
R
thJC
2.5 K/W
Inductive load, T
J
= 25C
I
C
= 12 A, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= 22
Switching times may increase for
V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXSA 12N60AU1
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 AA Outline
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