Preliminary Data Sheet
1996 IXYS Corporation. All rights reserved.
95586(7/96)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min.
Typ. Max.
BV
CES
I
C
= 3.0 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 1.5 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
, V
GE
= 0 V
T
J
= 25C
200
A
Note 2
T
J
= 125C
1 mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
+ 100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
I
C25
=
30 A
V
CES
= 1200 V
V
CE(sat)
= 4.0 V
IXSH15N120A
IGBT
"S" Series - Improved SCSOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25C to 150C
1200
V
V
CGR
T
J
= 25C to 150C; R
GE
= 1 M
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
30
A
I
C90
T
C
= 90C
15
A
I
CM
T
C
= 25C, 1 ms
60
A
SSOA
V
GE
= 15 V, T
J
= 125C, R
G
= 82
I
CM
= 30
A
(RBSOA)
Clamped inductive load, L = 100 H
@ 0.8 V
CES
t
sc
T
J
= 125C, V
CE
= 720 V; V
GE
= 15V, R
G
= 82
5
s
P
C
T
C
= 25C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
STG
-55 ... +150
C
M
d
Mounting torque
1.15/10 Nm/lb-in.
.
Weight
6
g
Max. Lead Temperature for
300
C
Soldering (1.6mm from case for 10s)
Features
2
nd
generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
Advantages
Easy to mount (isolated mounting
hole)
Reduces assembly time and cost
G
E
C
TO-247AD
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH15N120A
Data contained herein reflects measurements and characterization data from engineering lots.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min Typ.
Max.
TO-247AD (IXSH)
g
fs
I
C
= I
C90
, V
CE
= 10 V,
6
7
S
Pulse test, t < 300 s, duty cycle
< 2 %
I
C(on)
V
GE
= 15V, V
CE
= 10 V
65
A
C
ies
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
1800
pF
C
oes
160
pF
C
res
45
pF
Q
g
I
C
= I
c90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
75
nC
Q
ge
20
nC
Q
gc
35
nC
t
d(on)
Inductive load, T
J
= 25C
100
ns
t
ri
I
C
= I
C90
, V
GE
= 15 V, L = 100H
200
ns
t
d(off)
R
G
= 82
, VCLAMP = 0.8 V
CES
450
ns
t
fi
Note 1
600
ns
E
off
5.4
mJ
t
d(on)
Inductive load, T
J
= 125C
100
ns
t
ri
I
C
= I
C90,
V
GE
= 15 V, L = 100H
200
ns
E
(on)
R
G
= 82
1.1
mJ
t
d(off)
V
CLAMP
= 0.8 V
CES
650
ns
t
fi
Note 1
900
ns
E
off
14.5
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
Notes:
1.) Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or R
G
values.
2.) Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
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