1997 IXYS All rights reserved
96539A (05/97)
Features
l
International standard package
l
Guaranteed Short Circuit SOA
capability
l
Low V
CE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Fast fall time for switching speeds
up to 20 kHz
Applications
l
AC motor speed control
l
Uninterruptible power supplies (UPS)
l
Welding
Advantages
l
High power density
G
E
TAB
V
CES
= 600V
I
C25
=
16A
V
CE(sat)typ
= 1.8V
IXSA 16N60
IXSP 16N60
Low V
CE(sat)
IGBT
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
32
A
I
C90
T
C
= 90
C
16
A
I
CM
T
C
= 25
C, 1 ms
52
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 150
I
CM
= 32
A
(RBSOA)
Clamped inductive load, L = 300
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
5
s
(SCSOA)
R
G
= 82
,
non repetitive
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Weight
2
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
260
C
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
TO-263AA
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 750
A, V
CE
= V
GE
3.5
6.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
2.3
V
Preliminary Data Sheet
G
C
E
TO-220AB(IXSP)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSA16N60
IXSP16N60
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
3.3
5.0
S
Pulse test, t
300
s, duty cycle
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
50
A
C
ies
920
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
65
pF
C
res
14
pF
Q
g
40
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
Q
gc
18
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
100
420
ns
t
fi
310
470
ns
E
off
1.9
2.9
mJ
t
d(on)
30
ns
t
ri
30
ns
E
on
0.12
mJ
t
d(off)
150
ns
t
fi
510
ns
E
off
3.0
mJ
R
thJC
1.25 K/W
Note 1: Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 25
C
I
C
= 16A, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= 22
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector Bottom Side
(Dimensions in inches and (mm))
Min. Recommended Footprint
Inductive load, T
J
= 125
C
I
C
= 16A, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= 22
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70
14.93
0.500
0.580
B
14.23
16.50
0.560
0.650
C
9.66
10.66
0.380
0.420
D
3.54
4.08
0.139
0.161
E
5.85
6.85
0.230
0.270
F
2.29
2.79
0.090
0.110
G
1.15
1.77
0.045
0.070
H
2.79
6.35
0.110
0.250
J
0.64
0.89
0.025
0.035
K
2.54
BSC
0.100
BSC
M
4.32
4.82
0.170
0.190
N
0.64
1.39
0.025
0.055
Q
0.51
0.76
0.020
0.030
R
2.04
2.49
0.080
0.115
TO-220 AB Outline
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