2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
1000
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25
C
250
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15
2.2
3.0
V
IGBT
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1000
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
1000
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
40
A
I
C90
T
C
= 90
C
20
A
I
CM
T
C
= 25
C, 1 ms
80
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 47
I
CM
= 40
A
(RBSOA)
Clamped inductive load, L = 300
H
@ 0.8 V
CES
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque with screw M3
0.45/4 Nm/lb.in.
Mounting torque with screw M3.5
0.55/5 Nm/lb.in.
Weight
TO-220
4
g
TO-263
2
g
DS98615B(01/03)
Features
International standard packages
JEDEC TO-220AB and TO-263AA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
Advantages
Easy to mount with one screw
Reduces assembly time and cost
High power density
G
E
C (TAB)
TO-263 AA (IXGA)
G C
E
TO-220AB (IXGP)
V
CES
= 1000 V
I
C25
= 40 A
V
CE(sat)
= 3.0 V
IXGA 20N100
IXGP 20N100
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
Pins: 1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Bottom Side
TO-220 AB Dimensions
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
12
16
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
1750
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
100
pF
C
res
38
pF
I
C(ON)
V
GE
= 10V, V
CE
= 10V
90
A
Q
g
73
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
Q
gc
26
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
350
700
ns
t
fi
280
700
ns
E
off
3.5
8.0
mJ
t
d(on)
30
ns
t
ri
30
ns
E
on
0.65
mJ
t
d(off)
700
ns
t
fi
520
ns
E
off
6.5
mJ
R
thJC
0.83
K/W
R
thCK
TO-220
0.5
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 800 V, R
G
= R
off
= 47
Remarks: Switching
times
may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 800 V, R
G
= R
off
= 47
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGA 20N100
IXGP 20N100
Min. Recommended Footprint
(Dimensions in inches and mm)
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