1996 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1000
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
1000
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
50
A
I
C90
T
C
= 90
C
25
A
I
CM
T
C
= 25
C, 1 ms
100
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 50
A
(RBSOA)
Clamped inductive load, L = 100
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 4.5 mA, V
GE
= 0 V
1000
V
V
GE(th)
I
C
= 500
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
500
A
V
GE
= 0 V
T
J
= 125
C
8
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
25N100U1
3.5
V
25N100AU1
4.0
V
V
CES
I
C25
V
CE(sat)
1000 V
50 A
3.5 V
1000 V
50 A
4.0 V
Preliminary data
95587 (9/96)
IXGH25N100U1
IXGH25N100AU1
Low V
CE(sat)
High speed IGBT
with Diode
G
C
E
TO-247 AD (IXGH)
G = Gate
C = Collector
E = Emitter
TAB = Collector
Features
l
International standard package
JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOS
TM
process
l
l
Low V
CE(sat)
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery Epitaxial Diode
(FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Saves space (two devices in one
package)
l
Easy to mount (isolated mounting
screw hole)
l
l
Reduces assembly time and cost
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH25N100U1 IXGH25N100AU1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
8
15
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2750
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
270
pF
C
res
50
pF
Q
g
130
180
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
60
nC
Q
gc
55
90
nC
t
d(on)
100
ns
t
ri
200
ns
t
d(off)
500
ns
t
fi
25N100AU1
500
ns
E
off
25N100AU1
5
mJ
t
d(on)
100
ns
t
ri
250
ns
E
on
3.5
mJ
t
d(off)
720
1000
ns
t
fi
25N100U1
950
3000
ns
25N100AU1
800
ns
E
off
25N100U1
10
mJ
25N100AU1
6
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
2.5
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 240 A/
s
16
18
A
t
rr
V
R
= 540 V
T
J
=125
C
120
ns
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V T
J
=25
C
35
50
ns
R
thJC
1 K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 33
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 33
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
1996 IXYS All rights reserved
IXGH25N100U1 IXGH25N100AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH25N100U1 IXGH25N100AU1
1996 IXYS All rights reserved
di
F
/dt - A/s
0
200
400
600
t
rr
-
nan
os
eco
n
d
s
0.0
0.2
0.4
0.6
0.8
di
F
/dt - A/s
200
400
600
I
RM
-
A
m
p
e
re
s
0
10
20
30
40
50
di
F
/dt - A/s
1
10
100
1000
Q
r
-
na
noc
ou
l
o
m
b
s
0
1
2
3
4
T
J
= 100C
V
R
= 540V
T
J
- Degrees C
0
40
80
120
160
N
o
r
m
a
liz
e
d
I
RM
/Q
r
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q
r
I
RM
di
F
/dt - A/s
0
100
200
300
400
500
600
t
fr
-
na
nos
ec
on
ds
0
200
400
600
800
1000
V
FR
-
V
o
l
t
s
0
10
20
30
40
50
t
fr
V
FR
T
J
= 125C
I
F
=37A
Voltage Drop - Volts
0.5
1.0
1.5
2.0
2.5
3.0
3.5
C
u
r
r
en
t
-
A
m
pe
r
e
s
0
20
40
60
80
100
T
J
= 150C
T
J
= 100C
T
J
= 25C
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
I
F
= 30A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
I
F
= 30A
max.
I
F
= 30A
T
J
= 100C
V
R
= 540V
T
J
= 100C
V
R
= 540V
Fig.11 Maximum Forward Voltage Drop Fig.12 Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
Fig.13 Junction Temperature Dependence Fig.14 Reverse Recovery Chargee
off I
RM
and Q
r
Fig.15 Peak Reverse Recovery Current Fig.16 Reverse Recovery Time
IXGH25N100U1 IXGH25N100AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH25N100U1 IXGH25N100AU1
Fig.17 Diode Transient Thermal resistance junction to case
Pulse Width - Seconds
0.001
0.01
0.1
1
R
th
J
C
-
K/
W
0.01
0.10
1.00
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