1996 IXYS All rights reserved
TO-247 AD
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
V
CES
I
C25
V
CE(sat)
Low V
CE(sat)
IXGH
25
N120
1200 V
50 A
3 V
High speed IGBT
IXGH
25
N120A
1200 V
50 A
4 V
Features
l
International standard package
JEDEC TO-247 AD
l
2nd generation HDMOS
TM
process
l
Low V
CE(sat)
- for low on-state conduction losses
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
l
Capacitor discharge systems
l
Solid state relays
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
92783D (3/96)
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
50
A
I
C90
T
C
= 90
C
25
A
I
CM
T
C
= 25
C, 1 ms
100
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 50
A
(RBSOA)
Clamped inductive load, L = 100
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
6
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
250
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
25N120
3
V
25N120A
4
V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 25N120
IXGH 25N120A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
8
15
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2750
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
200
pF
C
res
50
pF
Q
g
130
180
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
50
nC
Q
gc
55
90
nC
t
d(on)
100
ns
t
ri
250
ns
t
d(off)
650
1000
ns
t
fi
25N120
700
ns
25N120A
600
800
ns
E
off
25N120A
11
mJ
t
d(on)
100
ns
t
ri
250
ns
E
on
4.2
mJ
t
d(off)
720
1000
ns
t
fi
25N120
1200
ns
25N120A
800
1200
ns
E
off
25N120A
15
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
TO-247 AD Outline
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 33
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 33
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
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