1 - 2
2000 IXYS All rights reserved
BV
CES
I
C
= 3 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 2.5 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
, V
GE
= 0 V
T
J
= 25C
200
m
A
Note 2
T
J
= 125C
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
+ 100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
IGBT
Improved SCSOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min. Typ. Max.
TO-247AD
Features
Second generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
Advantages
Easy to mount (isolated mounting
hole)
Reduces assembly time and cost
95593A (7/00)
I
C25
=
50 A
V
CES
= 1200 V
V
CE(sat)
= 4.0 V
IXSH25N120A
V
CES
T
J
= 25C to 150C
1200
V
V
CGR
T
J
= 25C to 150C; R
GE
= 1 M
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
50
A
I
C90
T
C
= 90C
25
A
I
CM
T
C
= 25C, 1 ms
80
A
SSOA
V
GE
= 15 V, T
J
= 125C, R
G
= 33
W
I
CM
= 50
A
(RBSOA)Clamped inductive load, L = 100 H
@ 0.8 V
CES
t
sc
T
J
= 125C, V
CE
= 720 V; V
GE
= 15V, R
G
= 33
W
10
s
P
C
T
C
= 25C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
STG
-55 ... +150
C
M
d
Mounting torque
1.15/10
Nm/lb-in.
Weight
6
g
Max. Lead Temperature for
300
C
Soldering (1.6mm from case for 10s)
Symbol
Test Conditions
Maximum Ratings
G
C
E
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min.
Typ.
Max.
g
fs
I
C
= I
C90
,
V
CE
= 10 V,
10
17
S
Pulse test, t < 300 s, duty cycle
< 2 %
I
C(on)
V
GE
= 15V, V
CE
= 10 V
140
A
C
ies
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
2850
pF
C
oes
210
pF
C
res
50
pF
Q
g
I
C
= I
c90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
120
nC
Q
ge
30
nC
Q
gc
50
nC
t
d(on)
Inductive load, T
J
= 25C
100
ns
t
ri
I
C
= I
C90
, V
GE
= 15 V, L = 100H
200
ns
t
d(off)
R
G
= 18
W
, V
CLAMP
= 0.8 V
CES
450
ns
t
fi
Note 1
650
ns
E
off
9.6
mJ
t
d(on)
100
ns
t
ri
200
ns
E
(on)
1.8
mJ
t
d(off)
450
ns
t
fi
900
ns
E
off
17
mJ
R
thJC
0.63
K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 125C
I
C
= I
C90,
V
GE
= 15 V, L = 100H
R
G
= 18
W
V
CLAMP
= 0.8 V
CES
Note 1
Notes:
1) Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or Rg values.
2) Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXSH 25N120A
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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