1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
900
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
900
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
26N90
26
A
25N90
25
I
DM
T
C
= 25
C, pulse width limited by T
JM
26N90
104
A
25N90
100
I
AR
T
C
= 25
C
26N90
26
A
25N90
25
E
AR
T
C
= 25
C
64
mJ
E
AS
T
C
= 25
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
560
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
M
d
Mounting torque
TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247
6
g
TO-264
10 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
900
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
3.0
5.0
V
I
GSS
V
GS
=
20 V, V
DS
= 0
200
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
100
m
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
26N90
0.3
W
Note 1
25N90
0.33
W
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98553D (9/99)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
V
DSS
I
DSS
R
DS(on)
t
rr
900 V 26 A 0.30
W
250 ns
900 V 25 A 0.33
W
250 ns
IXFK/IXFX 26N90
IXFK/IXFX 25N90
Preliminary data sheet
S
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
18
28
S
C
iss
8.7
10.8
nF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
800
1000
pF
C
rss
300
375
pF
t
d(on)
60
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
35
ns
t
d(off)
R
G
= 1
W
(External),
130
ns
t
f
24
ns
Q
g(on)
240
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
56
nC
Q
gd
107
nC
R
thJC
0.22 K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
26N90
26
A
25N90
25
I
SM
Repetitive;
26N90
104
A
pulse width limited by T
JM
25N90
100
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.4
m
C
I
RM
10
A
I
F
= I
S
, -di/dt = 100 A/
m
s, V
R
= 100 V
Note: 1. Pulse test, t
300
m
s, duty cycle d
2 %
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
PLUS247
TM
(IXFX) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA (IXFK) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
V
DS
- Volts
0
2
4
6
8
10
I
D
- Am
p
e
re
s
0
5
10
15
20
V
DS
- Volts
0
5
10
15
20
25
I
D
- Amp
e
r
e
s
0
5
10
15
20
25
30
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(O
N)
-
No
rm
a
liz
e
d
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
GS
- Volts
2
3
4
5
6
7
I
D
- Amp
e
r
e
s
0
5
10
15
20
25
30
I
D
- Amperes
0
10
20
30
40
50
R
DS
(
O
N)
- No
rm
a
l
i
z
e
d
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
CE
- Volts
0
4
8
12
16
20
I
D
- Amp
e
r
e
s
0
10
20
30
40
50
6V
5V
VGS = 10V
VGS = 9V
8V
TJ = 25C
VGS = 9V
8V
7V
TJ = 25C
TJ = 125C
4V
4V
TJ = 25C
TJ = 125C
5V
6V
4V
5V
6V
VGS = 9V
8V
7V
T
J
= 125
O
C
VGS = 10V
7V
ID = 26A
ID = 13A
T
J
= 25
O
C
Figure 1. Output Characteristics at 25
O
C
Figure 2. Extended Output Characteristics at 125
O
C
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
Figure 6. R
DS(on)
normalized to 0.5 I
D25
value vs.
T
J
Figure 5. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
Figure 4. Admittance Curves
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 25N90
4 - 4
2000 IXYS All rights reserved
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
V
SD
- Volts
0.0
0.3
0.6
0.9
1.2
1.5
I
D
- A
m
p
e
r
e
s
0
5
10
15
20
25
30
35
40
45
50
Case Temperature -
o
C
-50
-25
0
25
50
75
100
125
150
I
D
- A
m
p
e
r
e
s
0
5
10
15
20
25
30
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(
th)
JC
- K
/
W
0.001
0.010
0.100
V
DS
- Volts
0
5
10
15
20
25
30
35
40
Ca
pac
i
tanc
e - p
F
100
1000
10000
Gate Charge - nC
0
50
100
150
200
250
300
350
V
GS
- V
o
lts
0
3
6
9
12
15
Crss
Coss
Ciss
VDS = 500 V
ID = 13 A
IG = 10 mA
f = 1MHz
IXF_26N90
TJ = 125oC
TJ = 25oC
0. 300
IXF_25N90
20000
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic
Diode
Figure10. Drain Current vs. Case
Temperature
Figure 11. Transient Thermal Resistance
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