1998 IXYS All rights reserved
B1 - 84
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
50
A
I
C90
T
C
= 90
C
31
A
I
CM
T
C
= 25
C, 1 ms
100
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 47
I
CM
= 50
A
(RBSOA)
Clamped inductive load, L = 30
H
@ V
CES
t
SC
V
GE
= 15 V, V
CE
= V
CES
, T
J
= 125
C
10
s
(SCSOA)
R
G
= 47
, non repetitive
P
C
T
C
= 25
C
IGBT
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.1/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
IXDH 30N120AU1
V
CES
= 1200 V
IXDT 30N120AU1
I
C25
= 50 A
V
CE(sat) typ
= 2.5 V
Short Circuit SOA Capability
Features
q
Square RBSOA
q
International standard package
q
Low V
CE(sat)
- for minimum on-state conduction
losses
q
Low package inductance
q
Fast Recovery
Epitaxial Diode
- short t
rr
and I
RM
Applications
q
AC motor speed control
q
DC servo and robot drives
q
DC choppers
q
Uninterruptible power supplies (UPS)
q
Switch-mode and resonant-mode
power supplies
Advantages
q
Space savings
q
High power density
q
Surface mountable,
high power packager
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 5 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 1 mA, V
CE
= V
GE
4
5.5
6.5
V
I
CES
V
CE
= V
CES
, V
GE
= 0 V
T
J
= 25
C
0.9
1.1
mA
V
CE
= 0.8 V
CES
, V
GE
= 0 V T
J
= 125
C
2
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
500
nA
V
CE(sat)
I
C
= 25 A, V
GE
= 15 V
2,5
3
V
IXYS reserves the right to change limits, test conditions and dimensions.
823
High Voltage IGBT
with Diode
C (TAB)
G
C
E
TO-247 AD (IXDH)
Preliminary Data
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
E
C (TAB)
TO-268 AA (IXDT)
1998 IXYS All rights reserved
B1 - 85
B1
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
C
ies
1650
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
250
pF
C
res
110
pF
Q
g
TBD
nC
Q
ge
I
C
= 25 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
TBD
nC
Q
gc
TBD
nC
t
d(on)
75
150
ns
t
ri
65
130
ns
t
d(off)
400
600
ns
t
fi
50
100
ns
E
on
3.7
mJ
E
off
2.4
mJ
R
thJC
0.42 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 125
C
I
C
= 25 A, V
GE
= 15 V,
V
CE
= 0.5 V
CES
, R
on/off
= 47
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.5 V
CES
, higher T
J
or
increased R
G
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= 25 A, V
GE
= 0 V,
2.1
2.6
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= 25 A, V
GE
= 0 V, -di
F
/dt = 200 A/
s
12
15
A
V
R
= 600 V
T
J
= 100
C
t
rr
I
F
= 25 A, V
GE
= 0 V, -di
F
/dt = 200 A/
s
V
R
= 600 V
T
J
= 100
C
200
ns
I
F
= 1 A; -di/dt = 200 A/
s; V
R
= 30 V T
J
= 25
C
40
60
ns
R
thJC
1 K/W
IXDH 30N120AU1
IXDT 30N120AU1
TO-268 AA Outline
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
P
e
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC
.215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
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