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Электронный компонент: 30N60BU1

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2002 IXYS All rights reserved
Features
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Optimized
V
CE(sat)
and switching
speeds for medium frequency
applications
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
97501E (02/02)
V
CES
= 600 V
I
C25
= 60 A
V
CE(sat)
= 1.8 V
t
fi
= 100 ns
IXGH 30N60BU1
IXGT 30N60BU1
HiPerFAST
TM
IGBT
with Diode
Combi Pack
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
60
A
I
C110
T
C
= 110
C
30
A
I
CM
T
C
= 25
C, 1 ms
120
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 60
A
(RBSOA)
Clamped inductive load, L = 100
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead and Tab temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
Weight
TO-268
4
g
TO-247 AD
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
A, V
GE
= 0 V
600
V
BV
CES
temperature coefficient
0.072
%/K
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.5
V
V
GE(th)
temperature coefficient
-0.286
%/K
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
500
A
V
GE
= 0 V
T
J
= 150
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15 V
1.8
V
V
CE(sat)
I
C
= I
C110
, V
GE
= 15 V
T
J
= 150
C
2.0
V
C (TAB)
TO-268
(IXGT)
G
E
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXGH 30N60BU1
IXGT 30N60BU1
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C110
; V
CE
= 10 V,
25
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2710
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
C
res
50
pF
Q
g
110
150 nC
Q
ge
I
C
= I
C110
, V
GE
= 15 V, V
CE
= 0.5 V
CES
22
35 nC
Q
gc
40
75 nC
t
d(on)
25
ns
t
ri
30
ns
t
d(off)
130
220
ns
t
fi
100
190
ns
E
off
1.0
2.0 mJ
t
d(on)
25
ns
t
ri
35
ns
E
on
1
mJ
t
d(off)
200
ns
t
fi
230
ns
E
off
2.5
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C110
, V
GE
= 0 V,
1.6
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= I
C110
, V
GE
= 0 V, -di
F
/dt = 240 A/
s
10
15
A
V
R
= 360 V
t
rr
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V
35
50
ns
R
thJC
1 K/W
Inductive load, T
J
= 25


C
I
C
= I
C110
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 150


C
I
C
= I
C110
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247 AA (D
3
PAK)
Min Recommended Footprint
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
2002 IXYS All rights reserved
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of V
CE(sat)
Fig. 5. Admittance Curves
Fig. 6. Temperature Dependence of BV
DSS
& V
GE(th)
V
CE
- Volts
0
1
2
3
4
5
I
C
- A
m
p
e
re
s
0
20
40
60
80
100
V
CE
-Volts
0
5
10
15
20
25
30
35
40
Capaci
tance -
pF
10
100
1000
10000
T
J
- Degrees C
25
50
75
100
125
150
V
CE
(sa
t
)
-
N
o
r
m
a
liz
e
d
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
1
2
3
4
5
I
C
- A
m
p
e
r
e
s
0
20
40
60
80
100
V
GE
- Volts
3
4
5
6
7
8
9
10
I
C
- A
m
p
e
r
e
s
0
20
40
60
80
100
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
p
e
r
e
s
0
40
80
120
160
200
13V
11V
9V
7V
V
CE
= 10V
T
J
= 25C
V
GE
= 15V
T
J
= 25C
I
C
= 15A
I
C
= 30A
I
C
= 60A
T
J
=
150C
C
rss
f = 1Mhz
5V
5V
V
GE
= 15V
T
J
= 25C
T
J
= 150C
C
iss
C
oss
V
GE
= 15V
13V
11V
9V
7V
V
GE
= 15V
13V
11V
9V
5V
7V
IXGH 30N60BU1
IXGT 30N60BU1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXGH 30N60BU1
IXGT 30N60BU1
Fig. 7. Dependence of E
OFF
and E
OFF
on I
C
.
Fig. 8. Dependence of E
OFF
on R
G
.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. IGBT Transient Thermal Resistance
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
JC

(K/W)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- A
m
p
e
r
e
s
0.1
1
10
100
Q
g
- nanocoulombs
0
25
50
75
100
125
150
175
V
GE
-
Volts
0
3
6
9
12
15
18
R
G
- Ohms
0
10
20
30
40
50
60
E
(O
N
)
-
mill
ijoul
es
0
2
4
6
8
10
I
C
- Amperes
0
20
40
60
80
E
(
O
FF)
- mi
lliJo
u
les
0
2
4
6
8
E
(O
N)
- mill
ijou
l
es
0
1
2
3
4
V
CE
= 360V
I
C
= 15A
I
C
= 30A
E
(ON)
E
(OFF)
T
J
= 150C
R
G
= 4.7
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 4.7
T
J
= 150C
60
I
C
= 60A
T
J
= 150C
I
C
= 30A
2002 IXYS All rights reserved
Fig. 12. Forward current
Fig. 13. Recovery charge versus -di
F
/dt.
Fig. 14. Peak reverse current versus
versus voltage drop.
-di
F
/dt.
Fig. 15. Dynamic parameters versus
Fig. 16. Reverse recovery time vs -di
F
/dt.
Fig. 17. Forward voltage recovery
junction temperature.
and time versus -di
F
/dt.
Fig. 18. Transient thermal resistance junction to case.
IXGH 30N60BU1
IXGT 30N60BU1