1 - 2
2000 IXYS All rights reserved
TO-247AD
(IXSH)
High Speed IGBT with Diode
IXSH
30
N60CD1
IXSK
30
N60CD1
IXST
30
N60CD1
Short Circuit SOA Capability
G
C
E
G = Gate
C = Collector
E = Emitter
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
55
A
I
C90
T
C
= 90
C
30
A
I
CM
T
C
= 25
C, 1 ms
110
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 10
W
I
CM
= 60
A
(RBSOA)
Clamped inductive load, V
CL
= 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 33
W,
non repetitive
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 2.5 mA, V
CE
= V
GE
4
7
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
m
A
V
GE
= 0 V
T
J
= 125
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
V
GE
= 15 V
I
C
= I
C90
2.5
V
Features
International standard packages:
JEDEC TO-247, TO-264& TO-268
Short Circuit SOA capability
High freqeuncy IGBT and anti-
parallel FRED in one package
New generation HDMOS
TM
process
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduces assembly time and cost
High power density
98518A (7/00)
V
CES
=
600 V
I
C25
=
55 A
V
CE(sat)
=
2.5 V
t
fi
=
70 ns
TO-268 (D3)
(IXST)
G
C
E
G
C
E
TO-264
(IXSK)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
10
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
3100
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
C
res
50
pF
Q
g
100
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
30
nC
Q
gc
38
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
90
150
ns
t
fi
70
120
ns
E
off
0.7
1.2
mJ
t
d(on)
35
ns
t
ri
35
ns
E
on
0.5
mJ
t
d(off)
150
ns
t
fi
140
ns
E
off
1.2
mJ
R
thJC
0.62 K/W
R
thCK
TO-247
0.25
K/W
R
thCK
TO-264
0.15
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V
T
J
= 150
O
C
1.7
V
Note 2
T
J
= 150
O
C
2.5
V
I
RM
I
F
= 100A; V
GE
= 0 V; T
J
= 100
C
2
2.5
A
V
R
= 100 V; -di
F
/dt = 100 A/
m
s
t
rr
I
F
= 1 A; -di/dt = 100 A/
m
s; V
R
= 30 V
T
J
= 25
C
35
50
ns
R
thJC
1.0 K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= 4.7
W
Note 1
Inductive load, T
J
= 25
C
I
C
= I
C90
; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= 4.7
W
Note 1.
IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1
Notes: 1. Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or increased R
G
.
2. Pulse test, t
300
m
s, duty cycle d
2 %
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
TO-268AA (IXST) (D
3
PAK)
Min. Recommended Footprint
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA (IXSK) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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