1 - 2
2000 IXYS All rights reserved
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
60
A
I
C90
T
C
= 90
C
31
A
I
CM
T
C
= 25
C, 1 ms
80
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
W
I
CM
= 62
A
(RBSOA)
Clamped inductive load, L = 100
m
H
@ 0.8 V
CES
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque (M3) TO-247
1.13/10
Nm/lb.in.
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
6
g
TO-268
4
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
m
A
V
GE
= 0 V
T
J
= 125
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.7
V
Ultra-Low V
CE(sat)
V
CES
= 600 V
IGBT with Diode
I
C25
= 60 A
V
CE(sat)
= 1.7 V
Features
IGBT and anti-parallel FRED in one
package
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
98559A (7/00)
IXGH 31N60D1
IXGT 31N60D1
Preliminary data
C (TAB)
G
C
E
TO-247 AD
(IXGH)
TO-268
(IXGT)
G
E
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
10
16
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
1500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
130
pF
C
res
40
pF
Q
g
80
100
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
15
30
nC
Q
gc
30
40
nC
t
d(on)
15
ns
t
ri
25
ns
t
d(off)
400
800
ns
t
fi
400
800
ns
E
off
6
mJ
t
d(on)
15
ns
t
ri
25
ns
E
on
1
mJ
t
d(off)
800
ns
t
fi
800
ns
E
off
12
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
T
J
= 150
C
1.6
V
Pulse test, t
300
m
s, duty cycle d
2 % T
J
= 25
C
2.5
V
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/
m
s
6
A
t
rr
V
R
= 100 V
T
J
=100
C
100
ns
I
F
= 1 A; -di/dt = 100 A/
m
s; V
R
= 30 V T
J
= 25
C
25
ns
R
thJC
1 K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXGH 31N60D1
IXGT 31N60D1
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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