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Электронный компонент: 32N60

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IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60
IXFN 32N60
IXFK 36N60
IXFN 36N60
V
DSS
I
D25
R
DS(on)
t
rr
IXFK/FN 36N60 600V
36A
0.18
250ns
IXFK/FN 32N60 600V
32A
0.25
250ns
Preliminary Data
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
T
J
= 25
C to 150
C
600
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
600
600
V
V
G S
Continuous
20
20
V
V
GSM
Transient
30
30
V
I
D25
T
C
= 25
C, Chip capability
32N60
32
32
A
36N60
36
36
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
32N60 128
128
A
36N60 144
144
A
I
AR
T
C
= 25
C
20
20
A
E
AR
T
C
= 25
C
30
30
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
5
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
500
520
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
-
C
V
ISOL
50/60 Hz, RMSt = 1 min
-
2500
V~
I
ISOL
1 mAt = 1 s
-
3000
V~
M
d
Mounting torque
0.9/6 1.5/13
Nm/lb.in.
Terminal connection torque
- 1.5/13
Nm/lb.in.
Weight
10
30
g
Features
International standard packages
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
92807G (01/96)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
600
V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
400
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
36N60
0.18
Pulse test, t
300
s, duty cycle
2 % 32N60
0.25
TO-264 AA (IXFK)
S
G
D
D (TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
1996 IXYS Corporation. All rights reserved.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60
IXFN 32N60
IXFK 36N60
IXFN 36N60
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
TO-264 AA Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
36
S
C
iss
9000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
840
pF
C
rss
280
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
45
ns
t
d(off)
R
G
= 1
(External),
100
ns
t
f
60
ns
Q
g(on)
325
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60
nC
Q
gd
120
nC
R
thJC
TO-264 AA
0.25
K/W
R
thCK
TO-264 AA
0.15
K/W
R
thJC
miniBLOC, SOT-227 B
0.24
K/W
R
thCK
miniBLOC, SOT-227 B
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ. Max.
I
S
V
GS
= 0
36N60
36
A
I
S
V
GS
= 0
32N60
32
A
I
SM
Repetitive; pulse width limited by T
JM
36N60
144
A
32N60
128
A
V
SD
I
F
= I
S
A, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
250
ns
I
RM
20
A
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60
IXFN 32N60
IXFK 36N60
IXFN 36N60
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60
IXFN 32N60
IXFK 36N60
IXFN 36N60