2001 IXYS All rights reserved
Symbol
Symbol
Symbol
Symbol
Symbol
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Maximum Ratings
Maximum Ratings
Maximum Ratings
Maximum Ratings
Maximum Ratings
V
V
V
V
V
CES
CES
CES
CES
CES
T
J
= 25
C to 150
C
35N140A 1400
V
35N135A 1350
V
V
V
V
V
V
CGR
CGR
CGR
CGR
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
35N140A 1400
V
35N135A 1350
V
V
V
V
V
V
GES
GES
GES
GES
GES
Continuous
20
V
V
V
V
V
V
GEM
GEM
GEM
GEM
GEM
Transient
30
V
II
II
I
C25
C25
C25
C25
C25
T
C
= 25
C
70
A
II
II
I
C90
C90
C90
C90
C90
T
C
= 90
C
35
A
II
II
I
CM
CM
CM
CM
CM
T
C
= 25
C, 1 ms
140
A
SSOA
SSOA
SSOA
SSOA
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 22
I
CM
= 70
A
(RBSOA)
(RBSOA)
(RBSOA)
(RBSOA)
(RBSOA)
Clamped inductive load, L = 30
H
@ 960
V
tt
tt
t
SC
SC
SC
SC
SC
V
GE
= 15 V, V
CE
= 840 V, T
J
= 125
C
10
s
(SCSOA)
(SCSOA)
(SCSOA)
(SCSOA)
(SCSOA)
R
G
= 22
,
non repetitive
P
P
P
P
P
C
C
C
C
C
T
C
= 25
C
300
W
T
TT
T
T
J
J
J
J
J
-55 ... +150
C
T
TT
T
T
JM
JM
JM
JM
JM
150
C
T
TT
T
T
stg
stg
stg
stg
stg
-55 ... +150
C
M
M
M
M
M
d
d
d
d
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
Weight
Weight
Weight
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Features
International standard package
JEDEC TO-247
High frequency IGBT with guaranteed
Short Circuit SOA capability
Fast Fall Time for switching speeds
up to 20 kHz
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drive
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Welding
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
High power density
TO-247 AD
TO-247 AD
TO-247 AD
TO-247 AD
TO-247 AD
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
92716H (5/01)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V
35N140A
1400
V
35N135A
1350
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25C
400
mA
V
GE
= 0 V
T
J
= 125C
2
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3.4
4
V
High Voltage,
High speed IGBT
Short Circuit SOA Capability
V
CES
I
C25
V
CE(sat)
1400 V 70 A
4 V
1350 V 70 A
4 V
IXSH 35N140A
IXSH 35N135A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH 35N135A
IXSH 35N140A
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
26
S
Pulse test, t 300 ms, duty cycle d 2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
210
A
C
ies
4150
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
235
pF
C
res
55
pF
Q
g
165
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
nC
Q
gc
75
nC
t
d(on)
40
ns
t
ri
60
ns
t
d(off)
200
400
ns
t
fi
400
750
ns
E
off
12
mJ
t
d(on)
40
ns
t
ri
65
ns
E
on
4
mJ
t
d(off)
200
ns
t
fi
800
ns
E
off
18
mJ
R
thJC
0.42 K/W
R
thCK
0.25
K/W
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
J
J
J
J
J
= 25
= 25
= 25
= 25
= 25
C
C
C
C
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 960 V, R
G
= 2.7
Switching times may increase for
V
CE
(Clamp) > 960 V, higher T
J
or increased R
G
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
J
J
J
J
J
= 125
= 125
= 125
= 125
= 125
C
C
C
C
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 960 V, R
G
= 2.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 960 V,
higher T
J
or increased R
G
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