1 - 4
2000 IXYS All rights reserved
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
Features
International standard package
JEDEC TO-247 AD
High current IGBT and paralled FRED
in one package
Low leakage current FRED
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density (two devices in
one package)
Switching speed for high frequency
applications
Easy to mount with 1 screw,
(isolated mounting screw hole)
97508C (6/98)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
m
A, V
GE
= 0 V
300
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
2.5
5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
m
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.4
V
V
CES
= 300 V
I
C25
=
60 A
V
CE(sat)
=
2.4 V
t
fi
=
75 ns
IXGH40N30BD1
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
300
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
300
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
60
A
I
C90
T
C
= 90
C
40
A
I
CM
T
C
= 25
C, 1 ms
160
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
W
I
CM
= 80
A
(RBSOA)
Clamped inductive load, L = 30
m
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
HiPerFAST
TM
IGBT
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
20
28
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
2500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
210
pF
C
res
60
pF
Q
g
145
170
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
23
35
nC
Q
gc
50
75
nC
t
d(on)
25
ns
t
ri
45
ns
t
d(off)
75
ns
t
fi
75
ns
E
off
0.3
mJ
t
d(on)
25
ns
t
ri
45
ns
E
on
0.5
mJ
t
d(off)
90
180
ns
t
fi
130
230
ns
E
off
0.6
1.4
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 1.0
W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 1.0
W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.8
V
Pulse test, t
300
m
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/
m
s
1.5
1.8
A
V
R
= 100 V; T
J
=100
C
t
rr
I
F
= 1 A; -di/dt = 100 A/
m
s; V
R
= 30 V T
J
= 25
C
30
ns
R
thJC
1 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IXGH40N30BD1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
V
CE
-Volts
0
5
10
15
20
25
30
35
40
Capaci
t
a
n
c
e -
pF
10
100
1000
10000
T
J
- Degrees C
25
50
75
100
125
150
V
C
E
(sat
)
-
No
r
m
a
lize
d
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
1
2
3
4
5
I
C
-
A
m
p
e
res
0
20
40
60
80
100
V
GE
- Volts
2
3
4
5
6
7
8
9
10
I
C
- A
m
p
e
r
e
s
0
20
40
60
80
100
V
CE
- Volts
0
2
4
6
8
10
I
C
-
A
m
p
e
r
e
s
0
40
80
120
160
200
11V
9V
7V
V
CE
= 10V
T
J
= 25C
V
GE
= 15V
T
J
= 25C
I
C
= 20A
I
C
= 40A
I
C
= 80A
T
J
=
125C
C
rss
f = 1Mhz
5V
5V
V
GE
= 15V
T
J
= 25C
V
CE
- Volts
0
1
2
3
4
5
I
C
-
A
m
p
e
res
0
20
40
60
80
100
T
J
= 125C
C
iss
C
oss
V
GE
= 15V
13V
11V
V
GE
= 15V
13V
11V
5V
7V
7V
13V
9 V
9V
IXGH40N30BD1
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of V
CE(sat)
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
)
4 - 4
2000 IXYS All rights reserved
I
C
- Amperes
0
20
40
60
80
E
(
O
FF)
-
mi
lli
J
o
u
l
e
s
0.0
0.5
1.0
1.5
2.0
2.5
E
(ON
)
-
mil
lij
o
u
l
e
s
0.00
0.25
0.50
0.75
1.00
1.25
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
J
C
(
K
/W
)
0.001
0.01
0.1
1
V
CE
- Volts
0
50
100
150
200
250
300
I
C
-
A
m
p
e
re
s
0.1
1
10
100
Q
g
- nanocoulombs
0
25
50
75
100
125
150
175
V
GE
-
V
o
lt
s
0
3
6
9
12
15
18
R
G
- Ohms
0
10
20
30
40
50
60
E
(
O
FF)
-
mi
lli
jo
u
l
e
s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
(ON
)
-
m
ill
ijo
u
l
e
s
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
CE
= 150V
I
C
= 40A
E
(OFF)
E
(OFF)
T
J
= -55 to +125C
R
G
= 4.7
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 4.7
T
J
= 125C
E
(ON)
I
C
= 80A
E
(OFF)
T
J
= 125C
I
C
= 40A
E
(ON)
I
C
= 20A
E
(OFF)
E
(ON)
E
(ON)
D=0.2
IXGH40N30BD1
Fig. 7. Dependence of E
ON
and E
OFF
on I
C
.
Fig. 8. Dependence of E
ON
and E
OFF
on R
G
.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. Transient Thermal Resistance
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