1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
75
A
I
C90
T
C
= 90
C
40
A
I
CM
T
C
= 25
C, 1 ms
150
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 2.7
W
I
CM
= 80
A
(RBSOA)
Clamped inductive load, V
CC
= 0.8 V
CES
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 22
W,
non repetitive
P
C
T
C
= 25
C
280
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
7
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
25
m
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.2
V
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 50 kHz
Applications
AC and DC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
98521B (7/00)
G = Gate
E = Emitter
TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
E
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B
IXST 40N60B
C
E
G
IXYS reserves the right to change limits, test conditions, and dimensions.
V
CES
=
600V
I
C25
=
75A
V
CE(sat)
=
2.2V
t
fi typ
=
100 ns
Preliminary data
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
16
23
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
3700
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
280
pF
C
res
80
pF
Q
g
190
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
nC
Q
gc
90
nC
t
d(on)
50
ns
t
ri
50
ns
t
d(off)
110
200
ns
t
fi
120
200
ns
E
off
1.8
2.6
mJ
t
d(on)
55
ns
t
ri
170
ns
E
on
1.7
mJ
t
d(off)
190
ns
t
fi
180
ns
E
off
2.0
mJ
R
thJC
0.45 K/W
R
thCK
(IXSH40N60B)
0.25
K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V,
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100 H
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
IXSH 40N60B
IXST 40N60B
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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